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TIP110/TIP111/TIP112 — NPN Epitaxial Silicon Darlington Transistor

November 2008

TIP110/TIP111/TIP112
NPN Epitaxial Silicon Darlington Transistor
• • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use

Equivalent Circuit CB

1

TO-220 2.Collector 3.Emitter
R1 R2 E

1.Base

R1 @ 10k W R2 @ 0.6kW

Absolute Maximum Ratings*
Symbol VCBO Collector-Base Voltage

T a = 25°C unless otherwise noted

Parameter : TIP110 : TIP111 : TIP112

Ratings 60 80 100 60 80 100 5 2 4 50 2 50 150 - 65 ~ 150

Units V V V V V V V A A mA W W °C °C

VCEO VEBO IC ICP IB PC TJ TSTG

Collector-Emitter Voltage : TIP110 :TIP111 : TIP112 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

© 2007 Fairchild Semiconductor Corporation TIP110/TIP111/TIP112 Rev.1.0.0 1

www.fairchildsemi.com

TIP110/TIP111/TIP112 — NPN Epitaxial Silicon Darlington Transistor

Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : TIP110 : TIP111 : TIP112 Collector Cut-off Current : TIP110 : TIP111 : TIP112 Collector Cut-off Current : TIP110 : TIP111 : TIP112 Emitter Cut-off Current DC Current GainCollector-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 2A IC = 2A, IB = 8mA VCE = 4V, IC = 2A VCB = 10V, IE = 0, f = 0.1MHz 1000 500 2.5 2.8 100 V V pF 1 1 1 2 mA mA mA mA VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 2 2 2 mA mA mA Test Condition IC = 30mA, IB= 0 Min. 60 80 100 Typ. Max. Units V V V

ICEO

ICBO

IEBO hFE VCE(sat) VBE(on) Cob

* Pulse Test: Pulse Width£300ms, Duty Cycle£2%

© 2007 Fairchild Semiconductor Corporation TIP110/TIP111/TIP112 Rev. 1.0.0 2

www.fairchildsemi.com

TIP110/TIP111/TIP112 — NPN Epitaxial Silicon Darlington Transistor

Typical Characteristics

2.0 1.8

IB = 500mA IB = 450mA IB = 400mA

I B=mA 350

10000

IC[A], COLLECTOR CURRENT

00 IB = 3

mA

VCE = 4V

1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0

hFE, DC CURRENT GAIN

mA IB = 250

1000

IB = 200mA

100

IB = 150mA

0

1

2

3

4

5

10 0.01

0.1

1

10

VCE[V], COLLECTOR-EMITTER VOLTAGE

IC[A], COLLECTOR CURRENT

Figure 1. Static Characteristic

Figure 2. DC current Gain

VBE(sat),VCE(sat)[V], SATURATION VOLTAGE

100

1000

I C = 500 IB

f = 0.1 MHz

10

Cob[pF], CAPACITANCE

100

VBE(sat)
1

10

VCE (sat)

0.1 0.01

0.1

1

10

1 0.01

0.1

1

10

100

IC[A], COLLECTOR CURRENT

V CB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

Figure 4. Collector Output Capacitance10

80 70

IC[A], COLLECTOR CURRENT

PC[W], POWER DISSIPATION

60 50 40 30 20 10 0

5mS
DC
1

1mS

0.1

TIP 110 TIP 111 TIP 112
1 10 100

0

25

50
o

75

100

125

150

175

VCE[V], COLLECTOR-EMITTER VOLTAGE

TC[ C], CASE TEMPERATURE

Figure 5. Safe Operating Area

Figure 6. Power Derating

© 2007 Fairchild Semiconductor CorporationTIP110/TIP111/TIP112 Rev. 1.0.0 3

www.fairchildsemi.com

TIP110/TIP111/TIP112 — NPN Epitaxial Silicon Darlington Transistor

Mechanical Dimensions

TO220

© 2007 Fairchild Semiconductor Corporation TIP110/TIP111/TIP112 Rev. 1.0.0 4

www.fairchildsemi.com

TIP110/TIP111/TIP112 TIP110/TIP111/TIP112 NPN Epitaxial Silicon Darlington Transistor

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