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27C64
64K (8K x 8) CMOS EPROM
FEATURES
• High speed performance - 120 ns access time available • CMOS Technology for low power consumption - 20 mA Active current - 100 µA Standby current • Factory programming available • Auto-insertion-compatible plastic packages • Auto ID aids automated programming • Separate chip enable and output enable controls • High speed “express” programming algorithm• Organized 8K x 8: JEDEC standard pinouts - 28-pin Dual-in-line package - 32-pin PLCC Package - 28-pin SOIC package - Tape and reel • Available for the following temperature ranges - Commercial: 0˚C to +70˚C - Industrial: -40˚C to +85˚C

PACKAGE TYPES
DIP/SOIC
VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 O0 O1 O2 VSS

•1 2 3 4 5 6 7 8 9 10 11 12 13 14

28 27 26 25 24 23 22 21 20 19 18 17 16 15

VCCPGM NC A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3

27C64

PLCC
A7 A12 VPP NU Vcc PGM NC
4 3 2 1 32 31 30

DESCRIPTION
The Microchip Technology Inc. 27C64 is a CMOS 64K bit (electrically) Programmable Read Only Memory. The device is organized as 8K words by 8 bits (8K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in lessthan 120 ns. CMOS design and processing enables this part to be used in systems where reduced power consumption and high reliability are requirements. A complete family of packages is offered to provide the most flexibility in applications. For surface mount applications, PLCC or SOIC packaging is available. Tape and reel packaging is also available for PLCC or SOIC packages.

A6 A5 A4 A3 A2 A1 A0NC O0

5 6

29 28

7 8 9 10 11 12 13 14 15 16

27 26 25 24 23 22 21

A8 A9 A11 NC OE A10 CE O7 O6

17

18

19

© 1996 Microchip Technology Inc.

O1 O2 VSS NU O3 O4 O5

20

27C64

DS11107L-page 1

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27C64
1.0
1.1

ELECTRICAL CHARACTERISTICS
Maximum Ratings*

TABLE 1-1:
Name A0-A12 CE OE PGM VPP O0 - O7 VCC VSS NCNU

PIN FUNCTION TABLE
Function Address Inputs Chip Enable Output Enable Program Enable Programming Voltage Data Output +5V Power Supply Ground No Connection; No Internal Connections Not Used; No External Connection Is Allowed

VCC and input voltages w.r.t. VSS ....... -0.6V to + 7.25V VPP voltage w.r.t. VSS during programming .......................................... -0.6V to +14V Voltageon A9 w.r.t. VSS ...................... -0.6V to +13.5V Output voltage w.r.t. VSS ............... -0.6V to VCC +1.0V Storage temperature .......................... -65˚C to +150˚C Ambient temp. with power applied ..... -65˚C to +125˚C
*Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of thedevice at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.

TABLE 1-2:

READ OPERATION DC CHARACTERISTICS
VCC = +5V (±10%) Commercial: Tamb = 0˚C to +70˚C Industrial: Tamb = -40˚C to +85˚C

Parameter Input Voltages Input Leakage OutputVoltages Output Leakage Input Capacitance Output Capacitance Power Supply Current, Active

Part* all all all all all all C I

Status Logic "1" Logic "0" — Logic "1" Logic "0" — — — TTL input TTL input

Symbol VIH VIL ILI VOH VOL ILO CIN COUT ICC1 ICC2

Min 2.0 -0.5 -10 2.4

Max VCC+1 0.8 10 0.45

Units V V µA V V µA pF pF mA mA

Conditions

VIN = 0 to VCC IOH = -400 µA IOL = 2.1 mAVOUT = 0V to VCC VIN = 0V; Tamb = 25°C; f = 1 MHz VOUT = 0V; Tamb = 25°C; f = 1 MHz VCC = 5.5V; VPP = VCC; f = 1 MHz; OE = CE = VIL; IOUT = 0 mA; VIL = -0.1 to 0.8V; VIH = 2.0 to VCC; Note 1

-10 — — — —

10 6 12 20 25

Power Supply Current, Standby IPP Read Current VPP Read Voltage

C I all all all

TTL input TTL input CMOS input Read Mode Read Mode

ICC(S) — — IPP VPP

— — —...