Circuito serie , paralelo y mixto

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DISCRETE SEMICONDUCTORS

DATA SHEET

M3D125

2N2222; 2N2222A NPN switching transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 29

Philips Semiconductors

Product specification

NPN switching transistors
FEATURES • High current (max. 800 mA) • Low voltage (max. 40 V). APPLICATIONS • Linear amplification and switching.DESCRIPTION NPN switching transistor in a TO-18 metal package. PNP complement: 2N2907A.
3

2N2222; 2N2222A
PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION

handbook, halfpage 1

3 2
MAM264

2

1

Fig.1 Simplified outline (TO-18) and symbol.

QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage 2N2222 2N2222A VCEO collector-emitter voltage2N2222 2N2222A IC Ptot hFE fT collector current (DC) total power dissipation DC current gain transition frequency 2N2222 2N2222A toff turn-off time ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA Tamb ≤ 25 °C IC = 10 mA; VCE = 10 V IC = 20 mA; VCE = 20 V; f = 100 MHz 250 300 − − − 250 MHz MHz ns open base − − − − 75 30 40 800 500 − V V mA mW open emitter − − 60 75 V V CONDITIONS MIN. MAX. UNIT

1997May 29

2

Philips Semiconductors

Product specification

NPN switching transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO 2N2222 2N2222A VCEO collector-emitter voltage 2N2222 2N2222A VEBO emitter-base voltage 2N2222 2N2222A IC ICM IBM Ptot Tstg Tj Tamb collector current (DC) peak collector current peak base current total powerdissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C Tcase ≤ 25 °C open collector − − − − − − − open base − − PARAMETER collector-base voltage CONDITIONS open emitter − −

2N2222; 2N2222A

MIN.

MAX. 60 75 30 40 5 6 800 800 200 500 1.2 +150 200 +150 V V V V V V

UNIT

mA mA mA mW W °C °C °C

−65 − −65

THERMAL CHARACTERISTICS SYMBOL Rth j-a Rthj-c PARAMETER thermal resistance from junction to ambient thermal resistance from junction to case CONDITIONS in free air VALUE 350 146 UNIT K/W K/W

1997 May 29

3

Philips Semiconductors

Product specification

NPN switching transistors
CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current 2N2222 ICBO collector cut-off current 2N2222AIEBO hFE emitter cut-off current DC current gain IE = 0; VCB = 60 V IE = 0; VCB = 60 V; Tamb = 150 °C IC = 0; VEB = 3 V IC = 0.1 mA; VCE = 10 V IC = 1 mA; VCE = 10 V IC = 10 mA; VCE = 10 V IC = 150 mA; VCE = 1 V; note 1 IC = 150 mA; VCE = 10 V; note 1 hFE hFE DC current gain 2N2222A DC current gain 2N2222 2N2222A VCEsat collector-emitter saturation voltage 2N2222 VCEsat collector-emitter saturationvoltage 2N2222A VBEsat base-emitter saturation voltage 2N2222 VBEsat base-emitter saturation voltage 2N2222A Cc Ce fT collector capacitance emitter capacitance 2N2222A transition frequency 2N2222 2N2222A F noise figure 2N2222A IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz IC = 20 mA; VCE = 20 V; f = 100 MHz IC = 150 mA; IB = 15 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 IE = ie = 0; VCB= 10 V; f = 1 MHz IC = ic = 0; VEB = 500 mV; f = 1 MHz IC = 150 mA; IB = 15 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 IC = 150 mA; IB = 15 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 IC = 150 mA; IB = 15 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 IC = 500 mA; VCE = 10 V; note 1 IC = 10 mA; VCE = 10 V; Tamb = −55 °C IE = 0; VCB = 50 V IE = 0; VCB = 50 V; Tamb = 150 °C CONDITIONS

2N2222;2N2222A

MIN. − − − − − 35 50 75 50 100 35 30 40 − − − − − − 0.6 − − − 250 300 −

MAX. 10 10 10 10 10 − − − − 300 − − − 400 1.6 300 1 1.3 2.6 1.2 2 8 25 − − 4

UNIT nA µA nA µA nA

mV V mV V V V V V pF pF MHz MHz dB

1997 May 29

4

Philips Semiconductors

Product specification

NPN switching transistors

2N2222; 2N2222A

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT...
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