Datasshet 1n4448

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1N4148 / 1N4448
FAST SWITCHING DIODE Features
· · · Fast Switching Speed General Purpose Rectification Silicon Epitaxial Planar Construction
A

B

A

Mechanical Data
· · · · · Case: DO-35Leads: Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Marking: Type Number Weight: 0.13 grams (approx.)
DO-35 Dim A B C D Min 25.40 ¾ ¾ ¾

D

C

Max ¾ 4.00 0.60 2.00

AllDimensions in mm

Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC BlockingVoltage RMS Reverse Voltage Forward Continuous Current (Note 1) Average Rectified Output Current (Note 1) Non-Repetitive Peak Forward Surge Current @ t = 1.0s @ t = 1.0ms Power Dissipation (Note 1) DerateAbove 25°C Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Symbol VRM VRRM VRWM VR VR(RMS) IFM IO IFSM Pd RqJA Tj , TSTG 300 150 1.0 2.0 500 1.68 300 -65 to+175 1N4148 100 75 53 500 1N4448 Unit V V V mA mA A mW mW/°C K/W °C

Electrical Characteristics
Characteristic Maximum Forward Voltage

@ TA = 25°C unless otherwise specified Symbol 1N41481N4448 1N4448 VFM Min ¾ 0.62 ¾ ¾ ¾ ¾ Max 1.0 0.72 1.0 5.0 50 30 25 4.0 4.0 Unit V mA mA mA nA pF ns Test Condition IF = 10mA IF = 5.0mA IF = 100mA VR = 75V VR = 70V, Tj = 150°C VR = 20V, Tj = 150°C VR =20V VR = 0, f = 1.0MHz IF = 10mA to IR =1.0mA VR = 6.0V, RL = 100W

Maximum Peak Reverse Current Capacitance Reverse Recovery Time

IRM Cj trr

Notes: 1. Valid provided that device terminals arekept at ambient temperature.

DS12019 Rev. B-2

1 of 2

1N4148 / 1N4448

IF, INSTANTANEOUS FORWARD CURRENT (mA)

1000

10,000

100
IR, LEAKAGE CURRENT (nA)
1000

10

100

1.010

0.1

VR = 20V

0.01 0 1 2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Forward Characteristics

1 0 100 200 Tj, JUNCTION TEMPERATURE (°C) Fig. 2, Leakage Current vs Junction Temperature...
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