Mosorb devices are designed to protect voltage sensitive components from high voltage, high−energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are ON Semiconductor’s exclusive, cost-effective, highlyreliable Surmetict axial leaded package and are ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications, to protect CMOS, MOS and Bipolar integrated circuits.
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Working Peak Reverse Voltage Range − 5.8 V to 214 V PeakPower − 1500 Watts @ 1 ms ESD Rating of Class 3 (>16 kV) per Human Body Model Maximum Clamp Voltage @ Peak Pulse Current Low Leakage < 5 mA Above 10 V UL 497B for Isolated Loop Circuit Protection Response Time is Typically < 1 ns These devices are manufactured with a Pb−Free external lead finish only*
AXIAL LEAD CASE 41A PLASTIC
L 1N6 xxxA 1.5KE xxxA YYWW L 1N6xxxA 1.5KExxxAYY WW = = = = = Assembly Location JEDEC Device Code ON Device Code Year Work Week
Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16 in from the case for 10 seconds POLARITY: Cathode indicated by polarity bandMOUNTING POSITION: Any
Device 1.5KExxxA 1.5KExxxARL4 1N6xxxA 1N6xxxARL4* Package Axial Lead Axial Lead Axial Lead Axial Lead Shipping† 500 Units/Box 1500/Tape & Reel 500 Units/Box 1500/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. *1N6302A Not Available in 1500/Tape & Reel
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2004
December, 2004 − Rev. 6
PublicationOrder Number: 1N6267A/D
Rating Peak Power Dissipation (Note 1) @ TL ≤ 25°C Steady State Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8 in Derated above TL = 75°C Thermal Resistance, Junction−to−Lead Forward Surge Current (Note 2) @ TA = 25°C Operating and Storage Temperature Range Symbol PPK PD Value 1500 5.0 20 RqJL IFSM TJ, Tstg 20 200 − 65 to +175 Unit W WmW/°C °C/W A °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 5and derated above TA = 25°C per Figure 2. 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. *Please see 1.5KE6.8CA to 1.5KE250CA for Bidirectional Devices
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 3.5 V Max., IF (Note 3) = 100 A) Symbol IPP VC VRWM IR VBR IT QVBR IF VF Parameter Maximum Reverse Peak Pulse CurrentClamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Maximum Temperature Coefficient of VBR Forward Current Forward Voltage @ IF IPP VC VBR VRWM IR VF IT V IF I
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 3) = 100 A)...