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HCC4011B/12B/23B HCF4011B/12B/23B
NAND GATES
QUAD 2 INPUT HCC/HCF 4011B DUAL 4 INPUT HCC/HCF 4012B TRIPLE 3 INPUT HCC/HCF 4023B

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PROPAGATION DELAY TIME = 60ns (typ.) AT CL =50pF, VDD = 10V BUFFERED INPUTS AND OUTPUTS QUIESCENT CURRENT SPECIFIED TO 20V FOR HCC DEVICE INPUT CURRENT OF 100nA AT 18V AND 25°C FOR HCC DEVICE 100% TESTED FOR QUIESCENT CURRENT 5V, 10V AND 15VPARAMETRIC RATINGS MEETS ALL REQUIREMENTS OF JEDEC TENTATIVE STANDARD No. 13A, ”STANDARD SPECIFICATIONS FOR DESCRIPTION OF ”B” SERIES CMOS DEVICES”

EY (Plastic Package)

F (Ceramic Frit Seal Package)M1 (Micro Package)

C1 (Plastic Chip Carrier)

ORDER CODES : HCC40XXBF HCF40XXBM1 HCF40XXBEY HCF40XXBC1

DESCRIPTION The HCC4011B, HCC4012B and HCC4023B (extended temperature range) andHCF4011B, HCF4012B and HCF4023B (intermediate temperature range) are monolithic, integrated circuit, available in 14-lead dual in-line plastic or ceramic package and plastic micropackage. PIN CONNECTIONS4011B

The HCC/HCF4011B, HCC/HCF4012B and HCC/HCF4023B NAND gates provide the system designer with direct implementation of the NAND function and supplement the existing family of COS/MOS gates. Allinputs and outputs are buffered.

4012B

4023B

June 1989

1/12

HCC/HFC4011B/12B/23B
ABSOLUTE MAXIMUM RATINGS
Symbol V DD * Vi II Pto t Parameter Supply Voltage : HC C Types H CF TypesInput Voltage DC Input Current (any one input) Total Power Dissipation (per package) Dissipation per Output Transistor for T o p = Full Package-temperature Range Operating Temperature : HCC Types H CFTypes Storage Temperature Value – 0.5 to + 20 – 0.5 to + 18 – 0.5 to V DD + 0.5 ± 10 200 100 – 55 to + 125 – 40 to + 85 – 65 to + 150 Unit V V V mA mW mW °C °C °C

T op T stg

Stresses above thoselisted under ”Absolute Maximum Ratings” may cause permane damage to the device. This is a stress rating only and nt functional operation of the device at these or any other conditions above those...
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