Fotodiodo

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BPW34
Vishay Semiconductors

Silicon PIN Photodiode
Description
The BPW34 is a high speed and high sensitive PIN photodiode in a miniature flat plastic package. Its top view construction makes it ideal as a low cost replacement of TO–5 devices in many applications. Due to its waterclear epoxy the device is sensitive to visible and infrared radiation. The large active area combined with aflat case gives a high sensitivity at a wide viewing angle.

Features
D D D D D D
Large radiant sensitive area (A=7.5 mm2) Wide angle of half sensitivity ϕ = ± 65° High photo sensitivity Fast response times Small junction capacitance Suitable for visible and near infrared radiation

94 8583

Applications
High speed photo detector

Absolute Maximum Ratings
Tamb = 25_C Parameter ReverseVoltage Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Tamb Symbol VR PV Tj Tstg Tsd RthJA Value 60 215 100 –55...+100 260 350 Unit V mW °C °C °C K/W

x 25 °C

t

x3s

Document Number 81521 Rev. 2, 20-May-99

www.vishay.com 1 (5)

BPW34
Vishay Semiconductors Basic Characteristics
Tamb = 25_CParameter Breakdown Voltage Reverse Dark Current Diode Capacitance Open Circuit Voltage Temp. Coefficient of Vo Short Circuit Current Temp. Coefficient of Ik Reverse Light Current g Test Conditions IR = 100 A, E = 0 VR = 10 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 3 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm EA = 1 klx Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm EA =1 klx, VR = 5 V Ee = 1 mW/cm2, = 950 nm, VR = 5 V

m

l l l l

l

Symbol V(BR) Iro CD CD Vo TKVo Ik Ik TKIk Ira Ira

Min 60

Typ 2 70 25 350 –2.6 70 47 0.1 75 50 ±65 900 600...1050 4x10–14 100 100

Max 30 40

40

Unit V nA pF pF mV mV/K A A %/K A A

m m m m

Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Noise Equivalent Power VR = 10 V,= 950 nm Rise Time VR = 10 V, RL = 1k , = 820 nm Fall Time VR = 10 V, RL = 1k , = 820 nm

l

lp l0.5
NEP tr tf

ϕ

l l

W W

deg nm nm W/√ Hz ns ns

Typical Characteristics (Tamb = 25_C unless otherwise specified)
I ra rel – Relative Reverse Light Current 1000 I ro – Reverse Dark Current ( nA ) 1.4

1.2

100

l=950nm

VR=5V

1.0

10

0.8

VR=10V 1 20 40 60 80 1000.6 0
94 8416

20

40

60

80

100

94 8403

Tamb – Ambient Temperature ( °C )

Tamb – Ambient Temperature ( °C )

Figure 1. Reverse Dark Current vs. Ambient Temperature

Figure 2. Relative Reverse Light Current vs. Ambient Temperature

www.vishay.com 2 (5)

Document Number 81521 Rev. 2, 20-May-99

BPW34
Vishay Semiconductors
1000 Ira – Reverse Light Current ( m A) CD – Diode Capacitance ( pF ) 80 E=0 f=1MHz 60

100

10

40

1

VR=5V l=950nm

20

0.1 0.01
94 8417

0 0.1 1 10
94 8407

0.1

1

10

100

Ee – Irradiance ( mW / cm2 )

VR – Reverse Voltage ( V )

Figure 3. Reverse Light Current vs. Irradiance
1000 Ira – Reverse Light Current ( m A )

Figure 6. Diode Capacitance vs. Reverse Voltage
S ( l ) rel – RelativeSpectral Sensitivity

1.0 0.8 0.6 0.4 0.2 0 350

100

10 VR=5V 1

0.1 101
94 8418

102

103

104
94 8420

550

750

950

1150

EA – Illuminance ( lx )

l – Wavelength ( nm )

Figure 4. Reverse Light Current vs. Illuminance
100 Ira – Reverse Light Current ( m A ) 1 mW/cm2 0.5 mW/cm2

Figure 7. Relative Spectral Sensitivity vs. Wavelength
0° 10 ° 20 ° 30°

S rel –Relative Sensitivity

40° 1.0 0.9 0.8 0.7 50° 60° 70° 80°

0.2 mW/cm2 10 0.1 mW/cm2 0.05 mW/cm2
l=950nm

1 0.1
94 8419

1

10

100
94 8406

0.6

0.4

0.2

0

0.2

0.4

0.6

VR – Reverse Voltage ( V )

Figure 5. Reverse Light Current vs. Reverse Voltage

Figure 8. Relative Radiant Sensitivity vs. Angular Displacement

Document Number 81521 Rev. 2, 20-May-99...
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