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  • Publicado : 15 de febrero de 2011
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OptiMOS®2 Power-Transistor
Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target application • N-channel,logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature

Product Summary V DS R DS(on),max (SMD version) ID 25 5.7 50 V mΩ AType





Package Ordering Code Marking

P-TO252-3-11 Q67042-S4149 06N03LA

P-TO252-3-23 Q67042-S4236 06N03LA

P-TO251-3-11 Q67042-S 06N03LAP-TO251-3-21 Q67042-S4145 06N03LA

Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain currentAvalanche energy, single pulse Reverse diode dv /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, Tstg T C=25 °C T C=25 °C3) I D=45 A, R GS=25 Ω I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Value 50 50 350 225 6 ±20 83 -55 ... 175 55/175/56 mJ kV/µs V W °C Unit A

Rev. 1.5

page 12004-03-23

Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS VGS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=40 µA V DS=25 V, V GS=0 V, T j=25 °C V DS=25 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20V, V DS=0 V V GS=4.5 V, I D=30 A V GS=4.5 V, I D=30 A, SMD version V GS=10 V, I D=30 A V GS=10 V, I D=30 A, SMD version Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=30 A 25...
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