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BC337/338

BC337/338
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 TO-92

1

1. Collector 2. Base 3. EmitterNPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCES Parameter Collector-Emitter Voltage : BC337 : BC338 Collector-Emitter Voltage : BC337 : BC338Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature Value 50 30 45 25 5 800 625 150 -55 ~ 150 Units V V V V V mA mW °C °C

VCEO

VEBO ICPC TJ TSTG

Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC337 : BC338 Collector-Emitter Breakdown Voltage : BC337 : BC338Emitter-Base Breakdown Voltage Collector Cut-off Current : BC337 : BC338 DC Current Gain Collector-Emitter Saturation Voltage Base Emitter On Voltage Current Gain Bandwidth Product Output CapacitanceTest Condition IC=10mA, IB=0 Min. 45 25 IC=0.1mA, VBE=0 50 30 IE=0.1mA, IC=0 VCE=45V, IB=0 VCE=25V, IB=0 VCE=1V, IC=100mA VCE=1V, IC=300mA IC=500mA, IB=50mA VCE=1V, IC=300mA VCE=5V, IC=10mA, f=50MHzVCB=10V, IE=0, f=1MHz 100 12 100 60 5 2 2 100 100 630 0.7 1.2 V V MHz pF V V V nA nA Typ. Max. Units V V

BVCES

BVEBO ICES

hFE1 hFE2 VCE (sat) VBE (on) fT Cob

hFE ClassificationClassification hFE1 hFE2 16 100 ~ 250 6025 160 ~ 400 10040 250 ~ 630 170-

©2002 Fairchild Semiconductor Corporation

Rev. A2, August 2002

BC337/338

Package Dimensions

TO-92
4.58 –0.15
+0.250.46

14.47 ±0.40

±0.10

4.58 ±0.20

1.27TYP [1.27 ±0.20] 3.60
±0.20

1.27TYP [1.27 ±0.20]

0.38 –0.05

+0.10

3.86MAX

1.02 ±0.10

0.38 –0.05

+0.10

(R2.29)

(0.25)Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002

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