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BF199

BF199
NPN RF Transistor

1

TO-92

1. Collector 2. Emitter 3. Base

Absolute Maximum Ratings* TC=25°C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG ParameterCollector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 25 40 4.0 50 - 55 ~ 150 Units V V V mA °C

* Theseratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These aresteady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Electrical Characteristics TC=25°C unless otherwise noted
Symbol OffCharacteristics V(BR)CEO V(BR)CBO V(BR)EBO ICES hFE VCE(sat) VBE(sat) VBE(on) fT Cre Parameter Test Condition IC = 1.0mA, IB = 0 IC = 100µA, IE = 0 IE = 10µA, IC = 0 VCE = 30V, IE = 0 IC = 7.0mA, VCE = 10V IC =10mA, IB = 5.0mA IC = 10mA, IB = 5.0mA IC = 7.0mA, VCE = 10V IC = 7.0mA, VCE = 10V, f = 100MHz VCB = 10V, IE = 0, f = 1.0MHz 38 0.2 0.92 0.925 1100 0.4 V V V MHz pF Min. 25 40 4.0 50 Max. Units V V VnA Collector-Emitter Breakdown Voltage * Collector-Base BreakdownVoltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-EmitterSaturation Voltage Base-Emitter On Voltage Current gain Bandwidth Product Common-Emitter Ruerse Transfer Capacitance

On Characteristics

Small Signal Characteristics

* Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤ 2.0%

Thermal Characteristics TA=25°C unless otherwise noted
Symbol PD RθJC RθJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case ThermalResistance, Junction to Ambient Max. 350 2.8 125 357 Units mW mW/°C °C/W °C/W

©2002 Fairchild Semiconductor Corporation

Rev. A, September 2002

BF199

Package Dimensions

TO-92
4.58...
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