# Microelectronica

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UNIVERSIDAD NACIONAL MAYOR DE SAN MARCOS

FUNDADA EN 1551

FACULTAD : Ing. Electrónica

CURSO : Microelectrónica

TEMA : Laboratorio 1

PROFESOR : Alarcon Matutti

ALUMNO : Tejada Llacsa Jesus Ignacio

Diseño físico de inversores CMOS:

Esquema 2.Tabla de verdad:

[pic]

Función lógica:

[pic][pic]

[pic]

Net-List Spice del inversor

CIRCUIT example

* IC Technology: AMS 1.2µm CMOS

VDD 1 0 DC 5.00

VEntrada 6 0 PULSE(0.00 5.00 1.00N 0.05N 0.05N 1.00N 2.10N)

* List of nodes

* "Salida" corresponds to n°4

* "Entrada" corresponds to n°6

*

* MOS devices

MN1 0 6 4 0 TN W= 2.40U L= 1.20U

MP1 4 6 1 1 TP W= 2.40U L= 1.20U

Aquí se puede observar lasdimensiones W/L = 2.4/1.2=2, para ambos Transistor N-MOS y P-MOS

C2 1 0 2.899fF

C3 1 0 3.282fF

C4 4 0 7.536fF

C6 6 0 2.359fF

* n-MOS Model 3 :

*

.MODEL TN NMOS LEVEL=3 VTO=0.70 KP=80.000E-6

+LD =-0.080U THETA=0.100 GAMMA=0.400

+PHI=0.700 KAPPA=0.010 VMAX=150.00K

+CGSO= 0.0p CGDO= 0.0p

* p-MOS Model 3:

.MODEL TP PMOS LEVEL=3 VTO=-0.76 KP=25.000E-6

+LD=-0.030U THETA=0.100 GAMMA=0.400

+PHI=0.700 KAPPA=0.045 VMAX=70.00K

+CGSO= 0.0p CGDO= 0.0p

* Transient analysis

.TEMP 27.0

.TRAN 3.00PS 10.00N

.PROBE

.END

CIF

( File : "D:\inversor1.CIF")

( Conversion from Microwind 2b - 17.01.2000 to CIF)

( Version 28/09/2010,15:16:35)

DS 1 1 1;

9 topcell;

L 1;

P -2875,6125 -500,6125 -500,10125 -2875,10125;

L 19;

P-2650,9475 -2350,9475 -2350,9775 -2650,9775;

P -2025,3725 -1725,3725 -1725,4025 -2025,4025;

P -2025,7100 -1725,7100 -1725,7400 -2025,7400;

P -2025,4975 -1725,4975 -1725,5275 -2025,5275;

P -2025,8350 -1725,8350 -1725,8650 -2025,8650;

L 13;

P -2750,4625 -2500,4625 -2500,8000 -2750,8000;

P -2500,7750 -1000,7750 -1000,8000 -2500,8000;

P -2750,4375 -1000,4375 -1000,4625-2750,4625;

L 23;

P -2125,5500 -1625,5500 -1625,6875 -2125,6875;

P -2250,3500 -1500,3500 -1500,4250 -2250,4250;

P -1500,8250 -875,8250 -875,8750 -1500,8750;

P -1500,3625 -875,3625 -875,4125 -1500,4125;

P -2875,9250 -2125,9250 -2125,10000 -2875,10000;

P -2250,4750 -1500,4750 -1500,5500 -2250,5500;

P -2250,6875 -1500,6875 -1500,7625 -2250,7625;

P -2250,8125 -1500,8125 -1500,8875-2250,8875;

L 2;

P -2125,4250 -1625,4250 -1625,4375 -2125,4375;

P -2250,4750 -1500,4750 -1500,5500 -2250,5500;

P -2250,3500 -1500,3500 -1500,4250 -2250,4250;

P -2875,9250 -2125,9250 -2125,10000 -2875,10000;

P -2125,4375 -1625,4375 -1625,4625 -2125,4625;

P -2125,4625 -1625,4625 -1625,4750 -2125,4750;

P -2125,8000 -1625,8000 -1625,8125 -2125,8125;

P -2125,7625 -1625,7625-1625,7750 -2125,7750;

P -2250,8125 -1500,8125 -1500,8875 -2250,8875;

P -2250,6875 -1500,6875 -1500,7625 -2250,7625;

P -2125,7750 -1625,7750 -1625,8000 -2125,8000;

L 16;

P -2375,4000 -1375,4000 -1375,4625 -2375,4625;

P -2500,4500 -1250,4500 -1250,5750 -2500,5750;

P -2500,3250 -1250,3250 -1250,4500 -2500,4500;

P -3125,9000 -1875,9000 -1875,10250 -3125,10250;

P -2375,4125-1375,4125 -1375,4875 -2375,4875;

P -2375,4375 -1375,4375 -1375,5000 -2375,5000;

L 17;

P -2375,7750 -1375,7750 -1375,8375 -2375,8375;

P -2375,7375 -1375,7375 -1375,8000 -2375,8000;

P -2500,7875 -1250,7875 -1250,9125 -2500,9125;

P -2500,6625 -1250,6625 -1250,7875 -2500,7875;

P -2375,7500 -1375,7500 -1375,8250 -2375,8250;

L 60;

94 Vdd -2500,9625;

94 Entrada -2625,5875;94 Salida -1750,6000;

94 Vdd -1125,8500;

94 Vss -1125,3875;

DF;

C 1;

E

Problema 3:

[pic]

[pic]

LIF

CIRCUIT G:\Microelectrónica\lab archivos\problema3.MSK

* IC Technology: ST 0.25µm - 6 Metal

VDD 1 0 DC 2.50

VEntrada 10 0 PULSE(0.00 2.50 1.50N 0.05N 0.05N 1.50N 3.10N)

*

* List of nodes

* "N4" corresponds to n°4

* "Salida" corresponds to n°6...