Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as solid−state relays, motor controls, heating controls and power supplies; or wherever full−wave silicon gate controlled solid−state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied mainterminal voltage with positive or negative gate triggering.
• Blocking Voltage to 800 V • All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Gate Triggering Guaranteed in Three Modes (MAC15 Series) or Four Modes (MAC15ASeries) • Pb−Free Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Peak Repetitive Off−State Voltage Note 1 (TJ = −40 to +125°C, Sine Wave 50 to 60 Hz, Gate Open) MAC15A6 MAC15−8, MAC15A8 MAC15−10, MAC15A10 Peak Gate Voltage (Pulse Width v 1.0 msec; TC = 90°C) On−State Current RMS; Full Cycle Sine Wave 50 to 60 Hz (TC = +90°C) Circuit Fusing Consideration (t =8.3 ms) Peak Non−Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = +80°C) Preceded and Followed by Rated Current Peak Gate Power (TC = +80°C, Pulse Width = 1.0 ms) Average Gate Power (TC = +80°C, t = 8.3 ms) Peak Gate Current (Pulse Width v 1.0 msec; TC = 90°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 400 600 800 VGM IT(RMS) I2t ITSM 10 15 93 150V A A2s A Value Unit V
TRIACS 15 AMPERES RMS 400 thru 800 VOLTS
MT2 G MT1
4 TO−220AB CASE 221A STYLE 4 1 MAC15xxG AYWW
MAC15xx xx A Y WW G
= Specific Device Code = See Table on Page 2 = Assembly Location = Year = Work Week = Pb−Free Package
PGM PG(AV) IGM TJ Tstg
20 0.5 2.0 −40 to +125 −40 to +150
W W A °C °C 1 2 3 4
MainTerminal 1 Main Terminal 2 Gate Main Terminal 2
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis.Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
See detailed ordering,marking, and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value.
August, 2006 − Rev. 3
Publication Order Number: MAC15A4/D
Characteristic Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient Maximum LeadTemperature for Soldering Purposes 1/8″ from Case for 10 Seconds Symbol RqJC RqJA TL Value 2.0 62.5 260 Unit °C/W °C/W °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic OFF CHARACTERISTICS Peak Blocking Current (VD = Rated VDRM, VRRM; Gate Open) ON CHARACTERISTICS Peak On−State Voltage Note 2 (ITM = "21 A Peak) Gate TriggerCurrent (Continuous dc) (VD = 12 Vdc, RL = 100 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) “A’’ SUFFIX ONLY Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) “A’’ SUFFIX ONLY Gate Non−Trigger Voltage (VD = 12 V, RL = 100 W) TJ = 110°C) MT2(+), G(+); MT2(−), G(−); MT2(+), G(−) MT2(−), G(+) “A’’ SUFFIX ONLY Holding Current (VD =...