Pn2222

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PN2222

PN2222
General Purpose Transistor

1

TO-92

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBOVCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 6030 5 600 625 150 -55 ~ 150 Units V V V mA mW °C °C

Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) fT Cob ParameterCollector-Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain * Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=10µA, IE=0 IC=10mA, IB=0 IE=10µA, IC=0 VCB=50V, IE=0 VEB=3V, IC=0 VCE=10V, IC=0.1mA VCE=10V, *IC=150mAIC=500mA, IB=50mA IC=500mA, IB=50mA VCE=20V, IC=20mA, f=100MHz VCB=10V, IE=0, f=1MHz 300 8 35 100 Min. 60 30 5 0.01 10 300 1 2 V V MHz pF Max. Units V V V µA nA

* Pulse Test: Pulse Width≤300µs,Duty Cycle≤2%

©2004 Fairchild Semiconductor Corporation

Rev. A, November 2004

PN2222

Package Dimensions

TO-92
4.58 –0.15
+0.25

0.46

14.47 ±0.40

±0.10

4.58 ±0.20

1.27TYP[1.27 ±0.20] 3.60
±0.20

1.27TYP [1.27 ±0.20]

0.38 –0.05

+0.10

3.86MAX

1.02 ±0.10

0.38 –0.05

+0.10

(R2.29)

(0.25)

Dimensions in Millimeters
©2002 Fairchild SemiconductorCorporation Rev. A, November 2004

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustivelist of all such trademarks.

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