Programacion
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Publicado: 3 de diciembre de 2012
2N5950
N-Channel RF Amplifier
• This device is designed primarily for electronic switching applications such as low on resistance analog switching.
• Sourced from process 50.
TO-92
1
1.Gate 2. Source 3. Drain
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Value
Units
VDG
Symbol
Drain-Gate Voltage
Parameter
30
V
VGS
Gate-Source Voltage
-30
VIGF
Forward Gate Current
10
mA
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ 150
°C
* This ratings are limiting values above which the serviceability ofany semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted onapplications involving pulsed or low duty cycle operations.
Thermal Characteristics
Ta=25°C unless otherwise noted
Max.
Units
PD
Symbol
Total Device Dissipation
Derate above 25°CParameter
350
2.8
mW
mW/°C
RθJC
Thermal Resistance, Junction to Case
125
°C/W
RθJA
Thermal Resistance, Junction to Ambient
357
°C/W
© 2007 Fairchild SemiconductorCorporation
2N5950 Rev. 1.0.0
www.fairchildsemi.com
1
2N5950 — N-Channel RF Amplifier
September 2007
Symbol
Parameter
Test Condition
Min.
Max.
Units
-1.0
-200
nA
nA-6.0
V
1.0
V
-5.0
V
Off Characteristics
Gate-Source Breakdown Voltage
IG = 1.0μA, VDS = 0
Gate Reverse Current
VGS = 25V, VDS = 0, T = 25°C
T = 100°C
VGS(off)Gate-Source Cut-off Voltage
VDS = 15V, ID = 100nA
VGS(f)
Gate-Source Forward Voltage
IG = 1.0mA
VGS
Gate-Source Forward Voltage
VDS = 15V, ID = 1mA
-1.8
10
V(BR)GSS
IGSS
-30-2.5
V
On Characteristics
*IDSS
Zero-Gate Voltage Drain Current *
VDS = 15V, VGS = 0
RDS(on)
Drain-Source On Resistance
ID = 476μA, f = 1.0kHz
15
mA
210
Ω
7500...
N-Channel RF Amplifier
• This device is designed primarily for electronic switching applications such as low on resistance analog switching.
• Sourced from process 50.
TO-92
1
1.Gate 2. Source 3. Drain
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Value
Units
VDG
Symbol
Drain-Gate Voltage
Parameter
30
V
VGS
Gate-Source Voltage
-30
VIGF
Forward Gate Current
10
mA
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ 150
°C
* This ratings are limiting values above which the serviceability ofany semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted onapplications involving pulsed or low duty cycle operations.
Thermal Characteristics
Ta=25°C unless otherwise noted
Max.
Units
PD
Symbol
Total Device Dissipation
Derate above 25°CParameter
350
2.8
mW
mW/°C
RθJC
Thermal Resistance, Junction to Case
125
°C/W
RθJA
Thermal Resistance, Junction to Ambient
357
°C/W
© 2007 Fairchild SemiconductorCorporation
2N5950 Rev. 1.0.0
www.fairchildsemi.com
1
2N5950 — N-Channel RF Amplifier
September 2007
Symbol
Parameter
Test Condition
Min.
Max.
Units
-1.0
-200
nA
nA-6.0
V
1.0
V
-5.0
V
Off Characteristics
Gate-Source Breakdown Voltage
IG = 1.0μA, VDS = 0
Gate Reverse Current
VGS = 25V, VDS = 0, T = 25°C
T = 100°C
VGS(off)Gate-Source Cut-off Voltage
VDS = 15V, ID = 100nA
VGS(f)
Gate-Source Forward Voltage
IG = 1.0mA
VGS
Gate-Source Forward Voltage
VDS = 15V, ID = 1mA
-1.8
10
V(BR)GSS
IGSS
-30-2.5
V
On Characteristics
*IDSS
Zero-Gate Voltage Drain Current *
VDS = 15V, VGS = 0
RDS(on)
Drain-Source On Resistance
ID = 476μA, f = 1.0kHz
15
mA
210
Ω
7500...
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