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DISCRETE SEMICONDUCTORS

DATA SHEET
handbook, 2 columns

M3D116

1N4001G to 1N4007G Rectifiers
Product specification Supersedes data of April 1992 1996 May 24

Philips SemiconductorsProduct specification

Rectifiers
FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Available in ammo-pack. DESCRIPTION

1N4001G to 1N4007GThis package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.

Rugged glass package, using a high temperature alloyed construction.

2/3 page k(Datasheet)

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM 1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G VR continuous reverse voltage1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G IF(AV) average forward current PARAMETER repetitive peak reverse voltage



a

MAM047

Fig.1 Simplified outline (SOD57) and symbol.CONDITIONS

MIN. − − − − − − − − − − − − − −

MAX. 50 100 200 400 600 800 1000 50 100 200 400 600 800 1000 V V V V V V V V V V V V V V

UNIT

averaged over any 20 ms period; Tamb = 75 °C; see Fig.2averaged over any 20 ms period; Tamb = 100 °C; see Fig.2

− − − − − −65 −65

1.00 A 0.75 A 1.00 A 10 30 +175 +175 A A °C °C

IF IFRM IFSM Tstg Tj

continuous forward current repetitive peakforward current non-repetitive peak forward current storage temperature junction temperature

Tamb = 75 °C; see Fig.2 half sinewave; 60 Hz

1996 May 24

2

Philips Semiconductors

Productspecification

Rectifiers
ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF VF(AV) IR IR(AV) PARAMETER forward voltage full-cycle average forward voltage reverse currentfull-cycle average reverse current IF(AV) = 1 A VR = VRmax VR = VRmax; Tamb = 100 °C

1N4001G to 1N4007G

CONDITIONS IF = 1 A; see Fig.3

MAX. 1.1 0.8 10 50 30 V V

UNIT

µA µA µA

VR =...
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