Scr C106

C106 Series
Preferred Devices

Sensitive Gate Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important.
Features http://onsemi.com

SCRs 4 A RMS, 200 − 600 V
G A K

• • • • •Pb−Free Packages are Available* Glassivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Holding Characteristics Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Sensitive Gate Triggering • Device Marking: Device Type, e.g., C106B, Date Code
3 2 1

REAR VIEW SHOW TAB TO−225AA CASE077 STYLE 2

MARKING DIAGRAM & PIN ASSIGNMENT
1. Cathode 2. Anode 3. Gate YWW C106xxx

xx = B, D, D1, D1G*, M, MG*, M1 Y = Year WW = Work Week G* = Pb−Free

ORDERING INFORMATION
Device C106B C106D C106D1** C106D1G C106M C106MG C106M1** Package TO225AA TO225AA TO225AA TO225AA (Pb−Free) TO225AA TO225AA (Pb−Free) TO225AA Shipping† 500/Box 500/Box 500/Box 500/Box 500/Box 500/Box 500/Box†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **D1 signifies European equivalent for D suffix and M1signifies European equivalent for M suffix.
Preferred devices are recommended choices for future use and best overall value.

© Semiconductor Components Industries, LLC, 2004

1

September, 2004 − Rev. 7

Publication Order Number: C106/D

C106 Series
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Characteristic Peak Repetitive Off−State Voltage (Note 1) (Sine Wave, 50−60 Hz, RGK =1 kW, TC = −40° to 110°C) C106B C106D, C106D1* C106M, C106M1* On-State RMS Current (180° Conduction Angles, TC = 80°C) Average On−State Current (180° Conduction Angles, TC = 80°C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = +110°C) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power (Pulse Width v1.0 msec, TC = 80°C) Forward Average Gate Power (Pulse Widthv1.0 msec, TC = 80°C) Forward Peak Gate Current (Pulse Width v1.0 msec, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range Mounting Torque (Note 2) IT(RMS) IT(AV) ITSM I2t PGM PG(AV) IGM TJ Tstg
−

Symbol VDRM, VRRM

Max

Unit V

200 400 600 4.0 2.55 20 1.65 0.5 0.1 0.2 −40 to +110 −40 to +150 6.0 A A A A2s W W A °C °C in. lb.

Maximum ratings are those valuesbeyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *D1 signifies European equivalent for D suffix and M1 signifies European equivalent for M suffix. 1.VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. Torque rating applies with use of compression washer(B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and heatsink contact pad are common.

THERMAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds...