Transistor 2n2222

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by P2N2222A/D

Amplifier Transistors
NPN Silicon
COLLECTOR 1 2 BASE 3 EMITTER

P2N2222A

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 75 6.0 600 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C
1 2 3

CASE 29–04, STYLE 17 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/WELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) Collector Cutoff Current (VCB = 60 Vdc, IE= 0) (VCB = 60 Vdc, IE = 0, TA = 150°C) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 10 V) Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO — — IEBO ICEO IBEX — — — 0.01 10 10 10 20 nAdc nAdc nAdc 40 75 6.0 — — — — 10 Vdc Vdc Vdc nAdc µAdc

Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc.1996

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P2N2222A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C) (IC = 150 mAdc, VCE = 10 Vdc)(1) (IC = 150 mAdc, VCE = 1.0 Vdc)(1) (IC = 500 mAdc, VCE = 10Vdc)(1) Collector – Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base – Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE 35 50 75 35 100 50 40 VCE(sat) — — VBE(sat) 0.6 — 1.2 2.0 0.3 1.0 Vdc — — — — 300 — — Vdc —

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(2) (IC = 20 mAdc, VCE = 20 Vdc,f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) fT Cobo Cibo hie 2.0 0.25 hre — — hfe 50 75 hoe 5.0 25 rb′Cc NF — — 35 200 150 4.0 ps dB 300 375 8.0 4.0 — 8.01.25 X 10– 4 300 — — — 8.0 25 MHz pF pF kΩ

mmhos

SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time (VCC = 30 Vdc, VBE(off) = –2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1) (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) (Figure 2) td tr ts tf — — — — 10 25 225 60 ns ns ns ns

1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 2. fT is defined as the frequency atwhich |hfe| extrapolates to unity.

v

v

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

P2N2222A
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ 30 V +16 V 0 –2 V 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% 1 kΩ < 2 ns 200 +16 V 0 CS* < 10 pF –14 V < 20 ns 1k 1N914 –4 V CS* < 10 pF 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% + 30 V 200

Scope rise time < 4 ns *Total shunt capacitance of...