Transistor
Páginas: 2 (312 palabras)
Publicado: 6 de mayo de 2011
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1398 2SC1398A
DESCRIPTION ·With TO-220 package ·2SC1398 is complement to type 2SA748 ·Largecollector power dissipation APPLICATIONS ·For medium power amplifier applicattions
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) andsymbol DESCRIPTION
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO PARAMETER Collector-base voltage 2SC1398 VCEO Collector-emitter voltage 2SC1398A VEBO IC ICM PC Tj Tstg Emitter-base voltageCollector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 70 5 2 3 15 150 -55~150 V A A W ℃ ℃ CONDITIONSOpen emitter VALUE 70 50 V UNIT V
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER2SC1398 V(BR)CEO Collector-emitter breakdown voltage 2SC1398A V(BR)CBO VCEsat VBEsat ICBO ICEO IEBO hFE-1 Collector-base breakdown voltage Collector-emitter saturation voltage Base-emittersaturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain 2SC1398 hFE-2 DC current gain 2SC1398A fT Transition frequency IC=0.5A ; VCE=5VIC=1A ; VCE=5V IC=1mA ,IE=0 IC=1A; IB=0.1A IC=2A; IB=0.2A VCB=40V; IE=0 VCE=20V; IC=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=10mA ,IB=0 CONDITIONS
2SC1398 2SC1398A
MIN 50
TYP.
MAXUNIT
V 70 70 0.6 1.0 1.0 1.5 1 100 100 30 50 50 120 220 160 MHz V V V μA μA μA
hFE-2 Classifications Type No. 2SC1398 2SC1398A P 50-100 50-100 Q 80-160 80-160 R 120-220
2 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1398 2SC1398A
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
Product Specification
Silicon NPN Power Transistors
2SC1398 2SC1398A
DESCRIPTION ·With TO-220 package ·2SC1398 is complement to type 2SA748 ·Largecollector power dissipation APPLICATIONS ·For medium power amplifier applicattions
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) andsymbol DESCRIPTION
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO PARAMETER Collector-base voltage 2SC1398 VCEO Collector-emitter voltage 2SC1398A VEBO IC ICM PC Tj Tstg Emitter-base voltageCollector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 70 5 2 3 15 150 -55~150 V A A W ℃ ℃ CONDITIONSOpen emitter VALUE 70 50 V UNIT V
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER2SC1398 V(BR)CEO Collector-emitter breakdown voltage 2SC1398A V(BR)CBO VCEsat VBEsat ICBO ICEO IEBO hFE-1 Collector-base breakdown voltage Collector-emitter saturation voltage Base-emittersaturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain 2SC1398 hFE-2 DC current gain 2SC1398A fT Transition frequency IC=0.5A ; VCE=5VIC=1A ; VCE=5V IC=1mA ,IE=0 IC=1A; IB=0.1A IC=2A; IB=0.2A VCB=40V; IE=0 VCE=20V; IC=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=10mA ,IB=0 CONDITIONS
2SC1398 2SC1398A
MIN 50
TYP.
MAXUNIT
V 70 70 0.6 1.0 1.0 1.5 1 100 100 30 50 50 120 220 160 MHz V V V μA μA μA
hFE-2 Classifications Type No. 2SC1398 2SC1398A P 50-100 50-100 Q 80-160 80-160 R 120-220
2 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1398 2SC1398A
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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