Transistor

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC1398 2SC1398A

DESCRIPTION ·With TO-220 package ·2SC1398 is complement to type 2SA748 ·Largecollector power dissipation APPLICATIONS ·For medium power amplifier applicattions
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) andsymbol DESCRIPTION

Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO PARAMETER Collector-base voltage 2SC1398 VCEO Collector-emitter voltage 2SC1398A VEBO IC ICM PC Tj Tstg Emitter-base voltageCollector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 70 5 2 3 15 150 -55~150 V A A W ℃ ℃ CONDITIONSOpen emitter VALUE 70 50 V UNIT V

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER2SC1398 V(BR)CEO Collector-emitter breakdown voltage 2SC1398A V(BR)CBO VCEsat VBEsat ICBO ICEO IEBO hFE-1 Collector-base breakdown voltage Collector-emitter saturation voltage Base-emittersaturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain 2SC1398 hFE-2 DC current gain 2SC1398A fT Transition frequency IC=0.5A ; VCE=5VIC=1A ; VCE=5V IC=1mA ,IE=0 IC=1A; IB=0.1A IC=2A; IB=0.2A VCB=40V; IE=0 VCE=20V; IC=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=10mA ,IB=0 CONDITIONS

2SC1398 2SC1398A

MIN 50

TYP.

MAXUNIT

V 70 70 0.6 1.0 1.0 1.5 1 100 100 30 50 50 120 220 160 MHz V V V μA μA μA

hFE-2 Classifications Type No. 2SC1398 2SC1398A P 50-100 50-100 Q 80-160 80-160 R 120-220

2 Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors
PACKAGE OUTLINE

2SC1398 2SC1398A

Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)

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