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TIP140/141/142 TIP145/146/147
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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TIP141, TIP142, TIP145 AND TIP147 ARE STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARYPNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
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APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The TIP140, TIP141and TIP142 are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration, mounted in TO-218 plastic package. They are intented for use in power linear and switchingapplications. The complementary PNP types are TIP145, TIP146 and TIP147 respectively.

TO-218

INTERNAL SCHEMATIC DIAGRAM

R1 Typ. = 5 KΩ

R2 Typ. = 150 Ω

ABSOLUTE MAXIMUM RATINGS
Symbol ParameterNPN PNP V CBO V CEO V EBO IC I CM IB P tot T stg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current BaseCurrent Total Dissipation at T case ≤ 25 o C Storage Temperature Max. Operating Junction Temperature TIP140 TIP145 60 60 Value TIP141 TIP146 80 80 5 10 20 0.5 125 -65 to 150 150 TIP142 TIP147 100 100 VV V A A A W
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Unit

C C

For PNP types voltage and current values are negative.

March 2000

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TIP140 / TIP141 / TIP142 / TIP145 / TIP146 / TIP147
THERMAL DATA
R thj-case ThermalResistance Junction-case Max 1
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C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current(I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions for TIP140/145 for TIP141/146 for TIP142/147 for TIP140/145 for TIP141/146 for TIP142/147 V EB = 5 V I C = 30 mA for TIP140/145 forTIP141/146 for TIP142/147 IC = 5 A I C = 10 A I C = 10 A IC = 5 A I C = 10 A I C = 10 A I B2 = -40 mA I B = 10 mA I B = 40 mA V CE = 4 V V CE = 4 V V CE = 4 V I B1 = 40 mA RL = 3 Ω 1000 500 0.9 4 µs µs V...
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