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IRFD9120
Data Sheet July 1999 File Number
2285.3

1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET
This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switchingconvertors, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17501.

Features
• 1.0A, 100V • rDS(ON) = 0.6Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • LinearTransfer Characteristics • High Input Impedance

Symbol
D

Ordering Information
PART NUMBER IRFD9120 PACKAGE HEXDIP BRAND
G

IRFD9120
S

NOTE: When ordering, use the entire part number.

Packaging
HEXDIP

DRAIN GATE SOURCE

4-45

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 |Copyright © Intersil Corporation 1999

IRFD9120
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . VGS Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg IRFD9120 -100 -100 -1.0 -8.0 ±20 1.0 0.008 370 -55 to 150 300 260 UNITS V V A A V W W/oC mJ oC
oC oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above thoseindicated in the operational sections of this specification is not implied.

NOTE: 1. TJ = 25oC to 125oC.

Electrical Specifications
PARAMETER

TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS LD Measured From the Drain Modified MOSFET Lead, 2.0mm (0.08in) From Symbol Showing the InHeader to Center ofDie ternal Devices Measured From the Source Inductances Lead, 2.0mm (0.08in) From Header to Source Bonding Pad
G LS S D LD

TEST CONDITIONS ID = -250µA, VGS = 0V, (Figure 9) VGS = VDS, ID = -250µA VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC VDS > ID(ON) x rDS(ON) MAX, VGS = -10V VGS = ±20V ID = -0.8A, VGS = -10V, (Figures 7, 8) VDS < 50V, ID = -0.8A (Figure 11) VDD...