2N2222

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D125

2N2222; 2N2222A
NPN switching transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04

1997 May 29

Philips Semiconductors

Product specification

NPN switching transistors

2N2222; 2N2222A

FEATURES

PINNING

• High current (max. 800 mA)

PIN

• Low voltage (max. 40 V).DESCRIPTION

1

base

3

APPLICATIONS

emitter

2

collector, connected to case

• Linear amplification and switching.
DESCRIPTION

3

handbook, halfpage
1

2

NPN switching transistor in a TO-18 metal package.
PNP complement: 2N2907A.

2
3

MAM264

1

Fig.1 Simplified outline (TO-18) and symbol.

QUICK REFERENCE DATA
SYMBOL
VCBO

PARAMETERcollector-base voltage

CONDITIONS

MIN.

MAX.

UNIT

open emitter
−

60

V

−

75

V

2N2222

−

30

V

2N2222A

−

40

V

−

800

mA

Tamb ≤ 25 °C

−

500

mW

75

−

250

−

MHz

300

−

MHz

−

250

ns

2N2222
2N2222A
VCEO

collector-emitter voltage

open base

IC

collector current (DC)

Ptot

total powerdissipation

hFE

DC current gain

IC = 10 mA; VCE = 10 V

fT

transition frequency

IC = 20 mA; VCE = 20 V; f = 100 MHz

2N2222
2N2222A
toff

turn-off time

1997 May 29

ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA

2

Philips Semiconductors

Product specification

NPN switching transistors

2N2222; 2N2222A

LIMITING VALUES
In accordance with the Absolute Maximum RatingSystem (IEC 134).
SYMBOL
VCBO

PARAMETER
collector-base voltage

CONDITIONS

MIN.

MAX.

UNIT

open emitter

2N2222

V

−

75

V

2N2222

−

30

V

2N2222A

−

40

V

2N2222

−

5

V

2N2222A

VEBO

60

2N2222A
VCEO

−

−

6

V

collector-emitter voltage

emitter-base voltage

open base

open collector

IC

collectorcurrent (DC)

−

800

mA

ICM

peak collector current

−

800

mA

IBM

peak base current

−

200

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

−

500

mW

Tcase ≤ 25 °C

−

1.2

W

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

200

°C

Tamb

operating ambient temperature

−65

+150

°C

THERMALCHARACTERISTICS
SYMBOL

PARAMETER

Rth j-a

thermal resistance from junction to ambient

Rth j-c

CONDITIONS

thermal resistance from junction to case

1997 May 29

in free air

VALUE

UNIT

3

350

K/W

146

K/W

Philips Semiconductors

Product specification

NPN switching transistors

2N2222; 2N2222A

CHARACTERISTICS
Tj = 25 °C unless otherwise specified.SYMBOL
ICBO

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector cut-off current

ICBO

IE = 0; VCB = 50 V

−

10

nA

IE = 0; VCB = 50 V; Tamb = 150 °C

2N2222

−

10

µA

collector cut-off current

IEBO

emitter cut-off current

hFE

DC current gain

IE = 0; VCB = 60 V

−

10

nA

IE = 0; VCB = 60 V; Tamb = 150 °C

2N2222A

−

10

µAIC = 0; VEB = 3 V

−

10

nA

35

−

50

−

IC = 10 mA; VCE = 10 V

75

−

IC = 150 mA; VCE = 1 V; note 1

50

−

IC = 150 mA; VCE = 10 V; note 1

100

300

35

−

2N2222

30

−

2N2222A

40

−

IC = 150 mA; IB = 15 mA; note 1

−

400

mV

IC = 500 mA; IB = 50 mA; note 1

−

1.6

V

IC = 150 mA; IB = 15 mA; note 1

−

300mV

IC = 500 mA; IB = 50 mA; note 1

−

1

V

IC = 150 mA; IB = 15 mA; note 1

−

1.3

V

IC = 500 mA; IB = 50 mA; note 1

−

2.6

V

IC = 150 mA; IB = 15 mA; note 1

0.6

1.2

V

IC = 500 mA; IB = 50 mA; note 1

−

2

V

−

8

pF

−

25

pF

2N2222

250

−

MHz

2N2222A

hFE

IC = 0.1 mA; VCE = 10 V
IC = 1 mA; VCE = 10 V

300...