2N3904

Semiconductor

2N3904
NPN Silicon Transistor

Descriptions
• General small signal application • Switching application

Features
• Low collector saturation voltage • Collectoroutput capacitance • Complementary pair with 2N3906

Ordering Information
Type NO. 2N3904 Marking 2N3904 Package Code TO-92

Outline Dimensions
3.45±0.1 4.5±0.1 2.25±0.1

unit : mm4.5±0.1

0.4±0.02

2.06±0.1

14.0±0.40

1.27 Typ. 2.54 Typ.

1 2 3

PIN Connections 1. Emitter 2. Base 3. Collector

1.20±0.1

0.38

KST-9010-000

1

2N3904Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storagetemperature range

Ta=25°C °

Symbol
VCBO VCEO VEBO IC PC Tj Tstg

Ratings
60 40 6 200 625 150 -55~150

Unit
V V V mA mW °C °C

Electrical Characteristics
CharacteristicCollector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current DC current gain Collector-Emitter saturation voltage Transitionfrequency Collector output capacitance Delay time Rise time Storage time Fall Time

Ta=25°C °

Symbol
BVCBO BVCEO BVEBO ICEX hFE VCE(sat) fT Cob td tr ts tf

Test Condition
IC=10µA, IE=0IC=1mA, IB=0 IE=10µA, IC=0 VCE=30V, VEB=3V VCE=1V, IC=10mA IC=50mA, IB=5mA VCE=20V, IC=10mA, f=100MHz VCB=5V, IE=0, f=1MHz VCC=3Vdc, VBE(off)=0.5Vdc. IC=10mAdc, IB1=1mAdcVCC=3Vdc,IC=10mAdc, IB1=IB2=1mAdc

Min.
60 40 6 100 300 -

Typ. Max.
50 300 0.3 4 35 35 200 50

Unit
V V V nA V MHz pF ns ns ns ns

KST-9010-000

2

Electrical Characteristic Curves
Fig.1 PC-Ta Fig. 2 hFE-IC

2N3904

Fig. 3 VCE(sat)-IC

KST-9010-000

3

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.