2N3904

2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
Features
• This device is designed as a general purpose amplifier and switch.
• The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

2N3904

PZT3904

MMBT3904
C

C

E

E
TO-92

SOT-23

Absolute Maximum Ratings*
Symbol

SOT-223

B

Mark:1A

EBC

C

Ta = 25°C unlessotherwise noted

Parameter

Value

Units

40

V

Collector-Base Voltage

60

V

Emitter-Base Voltage

6.0

V

200

mA

-55 to +150

°C

VCEO

Collector-Emitter Voltage

VCBO
VEBO
IC
TJ, Tstg

B

Collector Current - Continuous
Operating and Storage Junction Temperature Range

* These ratings are limiting values above which the serviceability of anysemiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.

Thermal Characteristics
Symbol
PD

Ta = 25°C unless otherwise noted

Max.

Parameter

2N3904
625
5.0

Total Device Dissipation
Derateabove 25°C

RθJC

Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient

200

357

Units

**PZT3904
1,000
8.0
125

mW
mW/°C
°C/W

83.3

RθJA

*MMBT3904
350
2.8

°C/W

* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".
** Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.

© 2011 FairchildSemiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. B0

www.fairchildsemi.com
1

2N3904 / MMBT3904 / PZT3904 — NPN General Purpose Amplifier

October 2011

Symbol

Ta = 25°C unless otherwise noted

Parameter

Test Condition

Min.

Max.

Units

OFF CHARACTERISTICS
V(BR)CEO

Collector-Emitter Breakdown Voltage

V(BR)CBO

Collector-Base Breakdown Voltage

V(BR)EBOEmitter-Base Breakdown Voltage

IBL
ICEX

IC = 1.0mA, IB = 0

40

V

IC = 10μA, IE = 0

60

V

IE = 10μA, IC = 0

6.0

V

Base Cutoff Current

VCE = 30V, VEB = 3V

50

nA

Collector Cutoff Current

VCE = 30V, VEB = 3V

50

nA

ON CHARACTERISTICS*
hFE

DC Current Gain

IC = 0.1mA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE= 1.0V
IC = 100mA, VCE = 1.0V

40
70
100
60
30

300

VCE(sat)

Collector-Emitter Saturation Voltage

IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA

0.2
0.3

V
V

VBE(sat)

Base-Emitter Saturation Voltage

IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA

0.65

0.85
0.95

V
V

Current Gain - Bandwidth Product

IC = 10mA, VCE = 20V,
f = 100MHz

300

CoboOutput Capacitance

VCB = 5.0V, IE = 0,
f = 1.0MHz

4.0

pF

Cibo

Input Capacitance

VEB = 0.5V, IC = 0,
f = 1.0MHz

8.0

pF

NF

Noise Figure

IC = 100μA, VCE = 5.0V,
RS = 1.0kΩ,
f = 10Hz to 15.7kHz

5.0

dB

VCC = 3.0V, VBE = 0.5V
IC = 10mA, IB1 = 1.0mA

35

ns

SMALL SIGNAL CHARACTERISTICS
fT

MHz

SWITCHING CHARACTERISTICS
td

Delay Time

trRise Time

ts

Storage Time

tf

Fall Time

VCC = 3.0V, IC = 10mA,
IB1 = IB2 = 1.0mA

35

ns

200

ns

50

ns

* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%

Ordering Information
Part Number

Marking

Package

Packing Method

Pack Qty

2N3904BU

2N3904

TO-92

BULK

10000

2N3904TA

2N3904

TO-92

AMMO

2000

2N3904TAR

2N3904TO-92

AMMO

2000

2N3904TF

2N3904

TO-92

TAPE REEL

2000

2N3904TFR

2N3904

TO-92

TAPE REEL

2000

MMBT3904

1A

SOT-23

TAPE REEL

3000

MMBT3904_D87Z

1A

SOT-23

TAPE REEL

10000

PZT3904

3904

SOT-223

TAPE REEL

2500

© 2011 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. B0

www.fairchildsemi.com
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