Amplificador Operacional

LF353 Wide Bandwidth Dual JFET Input Operational Amplifier

February 1995

LF353 Wide Bandwidth Dual JFET Input Operational Amplifier
General Description
These devices are low cost high speed dual JFET input operational amplifiers with an internally trimmed input offset voltage (BI-FET IITM technology) They require low supply current yet maintain a large gain bandwidth product and fast slewrate In addition well matched high voltage JFET input devices provide very low input bias and offset currents The LF353 is pin compatible with the standard LM1558 allowing designers to immediately upgrade the overall performance of existing LM1558 and LM358 designs These amplifiers may be used in applications such as high speed integrators fast D A converters sample and hold circuits and manyother circuits requiring low input offset voltage low input bias current high input impedance high slew rate and wide bandwidth The devices also exhibit low noise and offset voltage drift

Features
Y Y Y Y Y Y Y Y Y

Y Y

Internally trimmed offset voltage 10 mV Low input bias current 50pA Low input noise voltage 25 nV 0Hz Low input noise current 0 01 pA 0Hz Wide gain bandwidth 4 MHz High slewrate 13 V ms Low supply current 3 6 mA High input impedance 1012X k 0 02% Low total harmonic distortion AV e 10 RL e 10k VO e 20Vpbp BW e 20 Hz-20 kHz Low 1 f noise corner 50 Hz Fast settling time to 0 01% 2 ms

Typical Connection

Connection Diagrams

Metal Can Package (Top View)

Simplified Schematic
1 2 Dual

Order Number LF353H See NS Package Number H08A

Dual-In-Line Package (TopView)

Order Number LF353M or LF353N See NS Package Number M08A or N08E
TL H 5649 – 1
BI-FET IITM is a trademark of National Semiconductor Corporation

C1995 National Semiconductor Corporation

TL H 5649

RRD-B30M115 Printed in U S A

Absolute Maximum Ratings
If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors foravailability and specifications Supply Voltage Power Dissipation Operating Temperature Range Tj(MAX) Differential Input Voltage Input Voltage Range (Note 2) Output Short Circuit Duration Storage Temperature Range
g 18V

Lead Temp (Soldering 10 sec ) Soldering Information Dual-In-Line Package Soldering (10 sec ) Small Outline Package Vapor Phase (60 sec ) Infrared (15 sec )

260 C

260 C(Note 1) 0 C to a 70 C 150 C
g 30V g 15V

Continuous
b 65 C to a 150 C

215 C 220 C See AN-450 ‘‘Surface Mounting Methods and Their Effect on Product Reliability’’ for other methods of soldering surface mount devices ESD Tolerance (Note 7) 1700V iJA M Package TBD

DC Electrical Characteristics (Note 4)
Symbol VOS DVOS DT IOS IB RIN AVOL Parameter Input Offset Voltage Average TC of InputOffset Voltage Input Offset Current Input Bias Current Input Resistance Large Signal Voltage Gain Conditions MIn RS e 10kX TA e 25 C Over Temperature RS e 10 kX Tj e 25 C (Notes 4 5) Tjs70 C Tj e 25 C (Notes 4 5) Tjs70 C Tj e 25 C VS e g 15V TA e 25 C VO e g 10V RL e 2 kX Over Temperature VO VCM CMRR PSRR IS Output Voltage Swing Input Common-Mode Voltage Range Common-Mode Rejection Ratio SupplyVoltage Rejection Ratio Supply Current VS e g 15V RL e 10kX VS e g 15V RSs 10kX (Note 6) 25 15
g 12 g 11 g 13 5

LF353 Typ 5 10 25 50 1012 100 100 4 200 8 Max 10 13

Units mV mV mV C pA nA pA nA X V mV V mV V V V dB dB 65 mA

a 15 b 12

70 70

100 100 36

AC Electrical Characteristics (Note 4)
Symbol Parameter Amplifier to Amplifier Coupling SR GBW en in Slew Rate Gain Bandwidth ProductEquivalent Input Noise Voltage Equivalent Input Noise Current Conditions Min TA e 25 C f e 1 Hzb20 kHz (Input Referred) VS e g 15V TA e 25 C VS e g 15V TA e 25 C TA e 25 C RS e 100X f e 1000 Hz Tj e 25 C f e 1000 Hz 80 27 LF353 Typ
b 120

Units Max dB V ms MHz nV 0Hz pA 0Hz

13 4 16 0 01

Note 1 For operating at elevated temperatures the device must be derated based on a thermal...