Awl6950 datasheet

AWL6950
2.4/5 GHz 802.11a/b/g WLAN Power Amplifier
Data Sheet - Rev 2.2

FEATURES
• • • • • • • • • • • • 3.6 % EVM @ POUT = +19 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps 2.7 % EVM @ POUT = +20 dBm with IEEE 802.11g 64 QAM OFDM at 54 Mbps -35 dBr ACPR 1st Sidelobe, +22 dBm, with 802.11b CCK/DSSS Root Cosine Filtering, 1 Mbps -55 dBr ACPR 2nd Sidelobe, +22 dBm, with 802.11b CCK/DSSS RootCosine Filtering, 1 Mbps 32 dB of Linear Power Gain at 2.4 GHz 32 dB of Linear Power Gain at 5 GHz Single +3.3 V Supply Dual Temperature-Compensated Linear Power Detectors 50 Ω - Matched RF Ports Lead-free and RoHS Compliant 1 kV ESD Rating (HBM) 4 mm x 4 mm x 1.3 mm Surface Mount Module

AW L6

950

M21 Package 16 Pin 4 mm x 4 mm x 1.3 mm Surface Mount Module

APPLICATIONS
• 802.11a/b/g/nWLAN

PRODUCT DESCRIPTION
The ANADIGICS AWL6950 dual band power amplifier is a high performance InGaP HBT power amplifier module designed for transmit applications in the 2.4-2.5 GHz and 4.9-5.9 GHz bands. Matched to 50 Ω at all RF inputs and outputs, the part requires no additional RF matching components off-chip, making the AWL6950 the world’s simplest dual band PA module implementationavailable. The PA exhibits unparalleled linearity and efficiency for IEEE 802.11g, 802.11b, and 802.11a WLAN systems under the toughest signal configurations within these standards. The power detectors are temperature compensated on chip, enabling separate single-ended output voltages for each band with excellent accuracy over a wide range of operating temperatures. The PA is biased by a single +3.3 Vsupply and consumes ultra-low current in the OFF mode. The AWL6950 is manufactured using advanced InGaP HBT technology that offers state-of-the-art reliability, temperature stability, and ruggedness.
GND VPC VCC 2.4 GHz Power Detector

Bias Control

2.4 GHz RFIN

Matching Network

Matching Network

2.4 GHz RFOUT

5 GHz RFIN

Matching Network

Matching Network

5 GHz RFOUTBias Control

GND

VPC

VCC

5 GHz Power Detector

Figure 1: Block Diagram and Pinout

04/2006

AWL6950 Table 1: Pin Description

PIN 1

NAME GND

DESCRIPTION Ground 2 GHz RF Input. ESD protection circuits on this pin provide a DC path to ground. Avoid applying DC voltage to this pin. RF is internally matched to 50 Ω and AC coupled to the input stage. Route RF traces as coplanarwaveguide using adjacent ground pins. 5 GHz RF Input. Input stage internally matched to 50 Ω. Route as coplanar waveguide using adjacent ground pins. A shunt inductive matching element included inside the PA provides a DC path to ground at this pin. Avoid applying DC voltage to this pin. Ground 5 GHz On/Off Control. The recommended use is for on/off control of the PA. Nominally, 0 V applied willturn amplifier completely off;+3.3 V should be used to set amplifier to maximum output capability. Ground 5 GHz Supply Voltage. Bias for power transistors of the 5 GHz PA. 5 GHz Power Detector Output. DC coupled power detector output. An emitter follower BJT supplies the output for this pin. Ground 5 GHz RF Output. Output stage internally matched to 50 Ω. Route as coplanar waveguide using adjacentground pins. A shunt inductive matching element included inside the PA provides a DC path to ground at this pin. Avoid applying DC voltage to this pin. 2 GHz RF Output. ESD protection circuits on this pin provide a DC path to ground. Avoid applying DC voltage to this pin. RF is internally matched to 50 Ω and AC coupled to the input stage. Route RF traces as coplanar waveguide using adjacentground pins. Ground 2 GHz Power Detector Output. DC coupled power detector output. An emitter follower BJT supplies the output for this pin. 2 GHz Power Supply. Bias for power transistors of the 2 GHz PA. Ground 2 GHz On/Off Control. The recommended use is for on/off control of the PA. Nominally, 0 V applied will turn amplifier completely off; +3.3 V should be used to set amplifier to maximum output...