Bc558
Páginas: 5 (1011 palabras)
Publicado: 1 de octubre de 2010
BC556/557/558/559/560
Switching and Amplifier
• High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 ... BC 550
1
TO-92
1. Collector 2. Base 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BC556 : BC557/560 : BC558/559Collector-Emitter Voltage : BC556 : BC557/560 : BC558/559 Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature Value -80 -50 -30 -65 -45 -30 -5 -100 500 150 -65 ~ 150 Units V V V V V V V mA mW °C °C
VCEO
VEBO IC PC TJ TSTG
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol ICBO hFE VCE (sat) VBE (sat) VBE (on) fT Cob NFParameter Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure : BC556/557/558 : BC559/560 : BC559 : BC560 Test Condition VCB= -30V, IE=0 VCE= -5V, IC=2mA IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA VCE= -5V, IC= -2mAVCE= -5V, IC= -10mA VCE= -5V, IC= -10mA, f=10MHz VCB= -10V, IE=0, f=1MHz VCE= -5V, IC= -200µA f=1KHz, RG=2KΩ VCE= -5V, IC= -200µA RG=2KΩ, f=30~15000MHz 2 1 1.2 1.2 -600 Min. 110 -90 -250 -700 -900 -660 150 6 10 4 4 2 -750 -800 Typ. Max. -15 800 -300 -650 mV mV mV mV mV mV MHz pF dB dB dB dB Units nA
hFE Classification
Classification hFE A 110 ~ 220 B 200 ~ 450 C 420 ~ 800
©2002 FairchildSemiconductor Corporation
Rev. A2, August 2002
BC556/557/558/559/560
Typical Characteristics
-50 -45
1000
IB = -400µA IB = -350µA
VCE = -5V
IC[mA], COLLECTOR CURRENT
-40 -35 -30 -25 -20 -15 -10 -5 -0 -2 -4 -6 -8 -10
hFE, DC CURRENT GAIN
IB = -300µA IB = -250µA IB = -200µA IB = -150µA IB = -100µA IB = -50µA
100
10
-12
-14
-16
-18
-20
1 -0.1-1
-10
-100
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
-10
-100
-1
V BE(sat)
IC[mA], COLLECTOR CURRENT
IC = -10 IB
VCE = -5V
-10
-0.1
-1
VCE(sat)
-0.01 -0.1
-0.1 -1 -10 -100 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
IC[mA],COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
1000
Cob(pF), CAPACITANCE
10
f=1MHz IE = 0
VCE = -5V
100
1 -1 -10 -100
10 -1 -10
VCB[V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 5. CollectorOutput Capacitance
Figure 6. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
BC556/557/558/559/560
Package Dimensions
TO-92
4.58 –0.15
+0.25
0.46
14.47 ±0.40
±0.10
4.58 ±0.20
1.27TYP [1.27 ±0.20] 3.60
±0.20
1.27TYP [1.27 ±0.20]
0.38 –0.05
+0.10
3.86MAX
1.02 ±0.10
0.38 –0.05
+0.10
(R2.29)(0.25)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
TRADEMARKS
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