Bc559

BC556/557/558/559/560

BC556/557/558/559/560
Switching and Amplifier
• High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 ... BC 550

1

TO-92

1. Collector 2.Base 3. Emitter

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BC556 : BC557/560 : BC558/559Collector-Emitter Voltage : BC556 : BC557/560 : BC558/559 Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature Value -80 -50 -30 -65 -45 -30 -5 -100 500150 -65 ~ 150 Units V V V V V V V mA mW °C °C

VCEO

VEBO IC PC TJ TSTG

Electrical Characteristics Ta=25°C unless otherwise noted
Symbol ICBO hFE VCE (sat) VBE (sat) VBE (on) fT Cob NFParameter Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance NoiseFigure : BC556/557/558 : BC559/560 : BC559 : BC560 Test Condition VCB= -30V, IE=0 VCE= -5V, IC=2mA IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA VCE= -5V, IC= -2mAVCE= -5V, IC= -10mA VCE= -5V, IC= -10mA, f=10MHz VCB= -10V, IE=0, f=1MHz VCE= -5V, IC= -200µA f=1KHz, RG=2KΩ VCE= -5V, IC= -200µA RG=2KΩ, f=30~15000MHz 2 1 1.2 1.2 -600 Min. 110 -90 -250 -700 -900-660 150 6 10 4 4 2 -750 -800 Typ. Max. -15 800 -300 -650 mV mV mV mV mV mV MHz pF dB dB dB dB Units nA

hFE Classification
Classification hFE A 110 ~ 220 B 200 ~ 450 C 420 ~ 800

©2002 FairchildSemiconductor Corporation

Rev. A2, August 2002

BC556/557/558/559/560

Typical Characteristics

-50 -45

1000

IB = -400µA IB = -350µA

VCE = -5V

IC[mA], COLLECTOR CURRENT

-40 -35-30 -25 -20 -15 -10 -5 -0 -2 -4 -6 -8 -10

hFE, DC CURRENT GAIN

IB = -300µA IB = -250µA IB = -200µA IB = -150µA IB = -100µA IB = -50µA

100

10

-12

-14

-16

-18

-20

1 -0.1...