Bt151

Preliminary
SemiWell Semiconductor

BT151-600
Symbol
3. Gate
○ ○

Silicon Controlled Rectifiers
Features
Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 12 A )◆ Low On-State Voltage (1.4V(Typ.)@ ITM) ◆ Non-isolated Type
◆

▼
1 23

○

2. Anode

1. Cathode

TO-220

General Description
Standard gate triggering SCR is suitable for the applicationwhere requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating controlsystem.

Absolute Maximum Ratings
Symbol
VDRM IT(AV) IT(RMS) ITSM I2 t di/dt PGM PG(AV) IFGM VRGM TJ TSTG

( TJ = 25°C unless otherwise specified ) Condition Ratings
600 Half Sine Wave : TC = 111 °C180° Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t = 8.3ms 7.6 12 120 72 50 5 Over any 20ms period 0.5 2 5 - 40 ~ 125 - 40 ~ 150

Parameter
Repetitive Peak Off-State Voltage AverageOn-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing Critical rate of rise of on-state current Forward Peak Gate Power Dissipation Forward Average Gate Power DissipationForward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature

Units
V A A A A2 s A/㎲ W W A V °C °C

Oct, 2003. Rev. 0

1/5
Copyright@SemiWellSemiconductor Co., Ltd., All rights are reserved.

BT151-600
Electrical Characteristics
Symbol Items
VAK = VDRM TC = 25 °C TC = 125 °C ITM = 23 A VAK = 6 V(DC), RL=10 Ω IGT Gate Trigger Current (2) TC = 25°C ─ ─ 15 mA tp=380㎲ ─ ─ ─ ─ ─ ─ 10 200 1.7 ( TC = 25 °C unless otherwise noted )

Conditions

Ratings Min. Typ. Max.

Unit

IDRM

Repetitive Peak Off-State Current Peak On-State Voltage (1)㎂

VTM

V

VD = 6 V(DC), RL=10 Ω VGT Gate Trigger Voltage (2) TC = 25 °C ─ ─ 1.5 V

VGD dv/dt

Non-Trigger Gate Voltage (1) Critical Rate of Rise Off-State Voltage

VAK = 12 V,...