Ciencia

CNY70
Vishay Semiconductors

Reflective Optical Sensor with Transistor Output
Description
The CNY70 has a compact construction where the emitting light source and the detector are arranged in the same direction to sense the presence of an object by using the reflective IR beam from the object. The operating wavelength is 950 nm. The detector consists of a phototransistor.

Applications
DOptoelectronic scanning and switching devices
i.e., index sensing, coded disk scanning etc. (optoelectronic encoder assemblies for transmission sensing).

94 9320

Features
Marking aerea

D Compact construction in center-to-center spacing
of 0.1’

D No setting required D High signal output D Low temperature coefficient D Detector provided with optical filter D Current Transfer Ratio(CTR) of typical 5%

E

D

Top view

95 10930

Order Instruction
Ordering Code CNY70 Sensing Distance 0.3 mm Remarks

Document Number 83751 Rev. A4, 05–Apr–00

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CNY70
Vishay Semiconductors Absolute Maximum Ratings
Input (Emitter)
Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IFIFSM PV Tj Value 5 50 3 100 100 Unit V mA A mW °C

tp ≤ 10 ms Tamb ≤ 25°C

Output (Detector)
Parameter Collector emitter voltage Emitter collector voltage Collector current Power dissipation Junction temperature Test Conditions Symbol VCEO VECO IC PV Tj Value 32 7 50 100 100 Unit V V mA mW °C

Tamb ≤ 25°C

Coupler
Parameter Total power dissipation Ambient temperature range Storagetemperature range Soldering temperature Test Conditions Tamb ≤ 25°C Symbol Ptot Tamb Tstg Tsd Value 200 –55 to +85 –55 to +100 260 Unit mW °C °C °C

2 mm from case, t ≤ 5 s

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Document Number 83751 Rev. A4, 05–Jun–00

CNY70
Vishay Semiconductors Electrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter Forward voltage Test Conditions IF = 50 mA Symbol VF Min. Typ.1.25 Max. 1.6 Unit V

Output (Detector)
Parameter Collector emitter voltage Emitter collector voltage Collector dark current Test Conditions IC = 1 mA IE = 100 mA VCE = 20 V, If = 0, E = 0 Symbol VCEO VECO ICEO Min. 32 5 Typ. Max. Unit V V nA

200

Coupler
Parameter Collector current Test Conditions Symbol Min. Typ. VCE = 5 V, IF = 20 mA, IC1) 0.3 1.0 d = 0.3 mm (figure 1) Cross talkcurrent VCE = 5 V, IF = 20 mA ICX2) (figure 1) Collector emitter satuIF = 20 mA, IC = 0.1 mA, VCEsat1) ration voltage d = 0.3 mm (figure 1) 1) Measured with the ‘Kodak neutral test card’, white side with 90% diffuse reflectance 2) Measured without reflecting medium Max. Unit mA nA V

600 0.3

d

Reflecting medium (Kodak neutral test card)

~ ~ ~

~ ~ ~
Emitter

Detector

A

C

C

E95 10808

Figure 1. Test circuit

Document Number 83751 Rev. A4, 05–Apr–00

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CNY70
Vishay Semiconductors Typical Characteristics (Tamb = 25_C, unless otherwise specified)
300 P tot – Total Power Dissipation ( mW ) IC – Collector Current ( mA ) 10 Kodak Neutral Card (White Side) d=0.3 VCE=5V

Coupled device 200

1

0.1

Phototransistor 100 IR-diode0.01

0 0
95 11071

0.001 25 50 75 100
95 11065

0.1

1

10

100

Tamb – Ambient Temperature ( °C )

IF – Forward Current ( mA )

Figure 2. Total Power Dissipation vs. Ambient Temperature
1000.0 I C – Collector Current ( mA )

Figure 5. Collector Current vs. Forward Current

10 Kodak Neutral Card (White Side) d=0.3 1 IF = 50 mA 20 mA 10 mA 5 mA 0.1 2 mA 1 mA 0.01 0 0.2 0.40.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF – Forward Voltage ( V )
95 11066

I F – Forward Current ( mA )

100.0

10.0

1.0

0.1
96 11862

0.1

1

10

100

VCE – Collector Emitter Voltage ( V )

Figure 3. Forward Current vs. Forward Voltage
CTR rel – Relative Current Transfer Ratio 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 –30 –20 –10 0 10 20 30 40 50 60 70 80 Tamb – Ambient...