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TO-92
N-Channel RF Amplifier
This device is designed for electronic switching Applications such as low ON resistance analog switching. Sourced from Process 50.
AbsoluteMaximum Ratings * TA=25 degree C unless otherwise noted Symbol Parameter Value VDG Drain-Gate Voltage 25 VGS Gate-Source Voltage -25 IGF Forward Gate Current 10 Operating and Storage Junction TemperatureRange TJ,Tstg -55 to + 155
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Units V V mA degree C
NOTES : 1) These rating arebased on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
ThermalCharacteristics Symbol PD RθJC RθJA
TA = 25 degrees C unless otherwise noted.
Characteristic Total Device Dissipation Derate above 25 degrees C
Thermal Resistance, Junction to Case ThermalResistance, Junction to Ambient
Max 350 2.8 125 357
Units
mW mW/degrees C degrees C/W degrees C/W
* Device mounted on FR-4 PCB 1.5” X 1.6” X 0.06”
©1999 Fairchild Semiconductor CorporationN-Channel RF Amplifier
( Continued)
Electrical Characteristics Symbol Parameter
TA= 25 degrees C unless otherwise noted
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICSGate-Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate-Source Cutoff Voltage VGS(off) VGS
Gate-Source Voltage
IG=-1.0µA, VDS=0 VGS=-15V,VDS=0 VDS=15V, ID=2nA VDS=15V, ID=200µA
-25-2.0 -8.0 -0.5 -7.5
V nA V V
ON CHARACTERISTICS Zero-Gate Voltage IDSS
Drain Current
VDS=15V,VGS=0
VGS= 0V,VDS=15V,f=1kHz.
2.0
2000
20
7500
mA µS
gfs
ForwardTransconductance
Capacitance Ciss Crss
Common-Source Input Capacitance Common-Source reverse Transfer Capacitance
VGS=15V,VDS=0V f=1 MHz. VGS=15V,VDS=0V f=1 MHz.
7.0 3.0
pf pf
©1999 Fairchild...
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