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BS08D-T112
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

Silicon Bilateral Switch

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1 2 3CONNECTION DIAGRAM 1 T2 TERMINAL 2 GATE 3 T1 TERMINAL

Description: The BS08D-T112 bilateral switch is a silicon planar monolithic integrated circuit with the electrical characteristics of a bilateralthyristor. The device is designed to switch at 7 to 9 volts with a 0.01%/°C temperature coefficient and have excellently matched characteristics in both directions. Features: £ Low Switching Voltage of 7to 9 Volts £ Excellent Switching Voltage Temperature Characteristics (0.01%/°C) £ High Reliability Devices £ Gate Electrode Facilitating Switching Operation Control and Synchronization Applications:£ Trigger Circuits for Thyristor or Triac, Oscillators, Timers Ordering Information: BS08D-T112 is tape and fancil packaged (2500/box).

Outline Drawing and Circuit Diagram Dimension A B C D E Inches0.55 Min. 0.12 Max. 0.16 0.39 0.098 Max. Millimeters 14.0 Min. 3.0 Max. 4.0 1.0 2.5 Max. Dimension F G H J K Inches 0.016 0.10 0.018 0.004 0.29 Max. Millimeters 0.4 2.5 0.45 0.1 7.5 Max.

2/11 Rev.1

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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com BS08D-T112 Silicon Bilateral Switch

Absolute Maximum Ratings, Tj = 25°C unless otherwisespecified
Characteristics DC Forward Anode Current Repetitive Peak Forward Current (1% Duty Cycle, 10 µs Pulsewidth), Ta = 100°C Non-repetitive Peak Forward Current (10 µs Pulsewidth) Power DissipationDC Gate Current Storage Temperature Operating Temperature — PT IG Tstg Tj 2.0 450 5 -55 to 125 -55 to 125 Amperes mW mA °C °C Symbol IT — BS08D-T112 175 1.0 Units mA Amperes

Electrical andMechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Switching Voltage Switching Current Absolute Switching Voltage Difference Absolute Switching Current Difference Holding...