Circuitos eléctricos unidad completa

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ÍNDICE
UNIDAD II
Introducción………………………………………………………………………………………………………………………………………………….…………3
2.1 Características de los Semiconductores………………………………………………………………………………………………………….….4
a) Definición……………………………………………………………………………………………………………………………………………….……………4
2.1.1 Silicio………………………………………………………………………………………………………………………………………………………..…….4
2.1.2Germanio…………………………………………………………………………………………………………………………………………………..……4
2.1.3 Materiales tipo p y n………………………………………………………………………………………………………………………………….……5
2.2 Dispositivos semiconductores………………………………………………………………………………………………………………………….…5
2.2.1 Diodos…………………………………………………………………………………………………………………………………………………………….5
2.2.2 Transistores……………………………………………………………………………………………………………………………………………….……6
2.2.3 Tiristores…………………………………………………………………………………………………………………………………………………………7
2.3 Aplicaciones consemiconductores…………………………………………………………………………………………………….………………7
2.3.1 Rectificadores…………………………………………………………………………………………………………………………………….……………7
2.3.2 Amplificadores………………………………………………………………………………………………………………………………………………12
a) Clase A………………………………………………………………………………………………………………………………………….…..…13
b) Clase B………………………………………………………………………………………………………………………………………..….……13
c) Clase C………………………………………………………………………………………………………………………………………..………..13
d) Clase AB………………………………………………………………………………………………………………………………………..……..13
e) ClaseD……………………………………………………………………………………………………………………………………………..….13
f) Otras clases………………………………………………………………………………………………………………………………………..…14
2.3.3 Conmutadores………………………………………………………………………………………………………………………………………………14
a) Store-and-forward………………………………………………………………………………………………………………..................14
b) Cut-Through………………………………………………………………………………………………………………………………..…….…15
c) Adaptative Cut-Through……………………………………………………………………………………………………………………....15
d)Switches de Capa 2 o Layer 2 Switches……………………………………………………………………………….………………..15
e) Switches de Capa 3 o Layer 3 Switches……………………………………………………………………………………………..….15
e.1) Paquete-por-paquete………………………………………………………………………………………………………….16
e.2) Layer-3 Cut-Through……………………………………………………………………………………………………………16
f) Switches de Capa 4 o Layer 4 Switches………………………………………………………………………………………………….16
2.3.4 Fuentesde Poder………………………………………………………………………………………………………………………………………….16
2.3.5 Amplificadores………………………………………………………………………………………………………………………………………………16
2.3.6 Características…………………………………………………………………………………………………………………………………………..….17
2.3.7 Configuraciones…………………………………………………………………………………………………………………………………………….17
a) Comparador…………………………………………………………………………………………………………………………………………17
b)Seguidor………………………………………………………………………………………………………………………………………………18
c) Inversor……………………………………………………………………………………………………………………………………………….19
d) Función Exponencial y Logarítimica………………………………………………………………………………………………..……21
Conclusiones……………………………………………………………………………………………………………………………………………...............23
Bibliografía………………………………………………………………………………………………………………………………………………...............24

ÍNDICE DE FIGURAS
Figura 1.Diodos………………………………………………………………………………………………………………………………………………………6
Figura 2. Transistor…………………………………………………………………………………………………………………………………………………6
Figura 3. Tiristor………………………………………………………………………………………………………………………………………………………7
Figura 4. Rectificador de media onda………………………………………………………………………………………………………………………8
Figura 5. Rectificador de onda completa con tap central…………………………………………………………………………………………8
Figura 6. Rectificador de onda completa con derivacióncentral……………………………………………………………….................9
Figura 7. Rectificador puente……………………………………………………………………………………………………………………………………9
Figura 8. Rectificador de onda completa en puente de Windstone………………………………………………………………………..10
Figura 9. Rectificador trifásico conectado en estrella……………………………………………………………………………………………..10
Figura 10. Rectificador trifásico estrella…………………………………………………………………………………………………………………11
Figura 11. Rectificadorhexafásico……………………………………………………………………………………………………………...............11
Figura 12. Rectificador de onda...