Cny70

CNY70
www.vishay.com

Vishay Semiconductors

Reflective Optical Sensor with Transistor Output
Marking area

FEATURES
• Package type: leaded • Detector type: phototransistor • Dimensions (L x W x H in mm): 7 x 7 x 6

E

D

• Peak operating distance: < 0.5 mm • Operating range within > 20 % relative collector current: 0 mm to 5 mm

21835

Top view
19158_1

• Typical outputcurrent under test: IC = 1 mA • Emitter wavelength: 950 nm • Daylight blocking filter • Lead (Pb)-free soldering released • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

DESCRIPTION
The CNY70 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible light.

APPLICATIONS
• Optoelectronicscanning and switching devices i.e., index sensing, coded disk scanning etc. (optoelectronic encoder assemblies).

PRODUCT SUMMARY
PART NUMBER CNY70 DISTANCE FOR MAXIMUM CTRrel (1) (mm) 0 DISTANCE RANGE FOR RELATIVE Iout > 20 % (mm) 0 to 5 TYPICAL OUTPUT CURRENT UNDER TEST (2) (mA) 1 DAYLIGHT BLOCKING FILTER INTEGRATED Yes

Notes (1) CTR: current transfere ratio, I /I out in (2) Conditionslike in table basic charactristics/sensors

ORDERING INFORMATION
ORDERING CODE CNY70 Note (1) MOQ: minimum order quantity PACKAGING Tube VOLUME (1) MOQ: 4000 pcs, 80 pcs/tube REMARKS -

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER COUPLER Total power dissipation Ambient temperature range Storage temperature range Soldering temperature INPUT (EMITTER) Reversevoltage Forward current Forward surge current Power dissipation Junction temperature tp ≤ 10 μs Tamb ≤ 25 °C VR IF IFSM PV Tj 5 50 3 100 100 V mA A mW °C Distance to case 2 mm, t £ 5 s Tamb ≤ 25 °C Ptot Tamb Tstg Tsd 200 - 40 to + 85 - 40 to + 100 260 mW °C °C °C TEST CONDITION SYMBOL VALUE UNIT

Rev. 1.8, 30-Jul-12

Document Number: 83751 1 For technical questions, contact:sensorstechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

CNY70
www.vishay.com

Vishay Semiconductors
TEST CONDITION SYMBOL VCEO VECO IC Tamb ≤ 25 °C PV Tj VALUE 32 7 50 100 100 UNIT V V mA mW °C

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwisespecified)
PARAMETER OUTPUT (DETECTOR) Collector emitter voltage Emitter collector voltage Collector current Power dissipation Junction temperature

ABSOLUTE MAXIMUM RATINGS
300 P - Power Dissipation (mW)

Coupled device 200

Phototransistor 100 IR - diode

0 0
95 11071

25

50

75

100

Tamb - Ambient Temperature (°C)

Fig. 1 - Power Dissipation vs. Ambient Temperature

BASICCHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER COUPLER Collector current Cross talk current Collector emitter saturation voltage INPUT (EMITTER) Forward voltage Radiant intensity Peak wavelength Virtual source diameter OUTPUT (DETECTOR) Collector emitter voltage Emitter collector voltage Collector dark current IC = 1 mA IE = 100 μA VCE = 20 V, IF = 0 A, E = 0 lx VCEO VECOICEO 32 5 200 V V nA IF = 50 mA IF = 50 mA, tp = 20 ms IF = 100 mA Method: 63 % encircled energy VF Ie λP d 940 1.2 1.25 1.6 7.5 V mW/sr nm mm VCE = 5 V, IF = 20 mA, d = 0.3 mm (figure 1) VCE = 5 V, IF = 20 mA, (figure 2) IF = 20 mA, IC = 0.1 mA, d = 0.3 mm (figure 1) IC (2) ICX (3) VCEsat
(2)

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

0.3

1.0 600 0.3

mA nA V

Notes (1)Measured with the “Kodak neutral test card”, white side with 90 % diffuse reflectance (2) Measured without reflecting medium

Rev. 1.8, 30-Jul-12

Document Number: 83751 2 For technical questions, contact: sensorstechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT...