Crearlos

Philips Semiconductors

Product specification

Triacs

BT137 series

GENERAL DESCRIPTION
Glass passivated triacs in a plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.QUICK REFERENCE DATA
SYMBOL PARAMETER BT137BT137BT137Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500 500F 500G 500 8 65 600 600F 600G 600 8 65 800 800F 800G 800 8 65

VDRM IT(RMS) ITSM

V A A

PINNING - TO220AB
PIN 1 2 3 tab DESCRIPTION main terminal 1

PIN CONFIGURATION
tab

SYMBOL

T2
main terminal 2 gate mainterminal 2
1 23

T1

G

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb ≤ 102 ˚C full sine wave; Tj = 25 ˚C prior to surge t =20 ms t = 16.7 ms t = 10 ms ITM = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -500 5001 MAX. -600 6001 8 65 71 21 50 50 50 10 2 5 5 0.5 150 125 -800 800 UNIT V A A A A2s A/µs A/µs A/µs A/µs A V W W ˚C ˚C

I2t dIT/dt

IGM VGM PGM PG(AV) Tstg Tj

Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junctiontemperature

over any 20 ms period

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/µs. October 1997 1 Rev 1.200

Philips Semiconductors

Product specification

Triacs

BT137 series

THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN.TYP. 60 MAX. 2.0 2.4 UNIT K/W K/W K/W Thermal resistance full cycle junction to mounting base half cycle Thermal resistance in free air junction to ambient

STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS BT137VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A IT = 10 AVD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C MIN. TYP. ... 0.25 5 8 11 30 7 16 5 7 5 1.3 0.7 0.4 0.1 35 35 35 70 30 45 30 45 20 MAX. ...F 25 25 25 70 30 45 30 45 20 1.65 1.5 0.5 ...G 50 50 50 100 45 60 45 60 40 mA mA mA mA mA mA mA mA mA V V V mA UNIT

IL

Latching current

IH VT VGT ID

Holding current On-state voltage Gate trigger voltageOff-state leakage current

DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL dVD/dt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating voltage Gate controlled turn-on time CONDITIONS BT137VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; gate open circuit VDM = 400 V; Tj = 95 ˚C; IT(RMS) = 8 A; dIcom/dt = 3.6 A/ms; gate open circuit ITM =12 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs ... 100 MIN. ...F 50 ...G 200 TYP. 250 MAX. UNIT V/µs

dVcom/dt

-

-

10

20

-

V/µs

tgt

-

-

-

2

-

µs

October 1997

2

Rev 1.200

Philips Semiconductors

Product specification

Triacs

BT137 series

12 10

Ptot / W

BT137

Tmb(max) / C 101 = 180 120 105 109

10

IT(RMS) / A

BT1371

90 60 30

8

102 C

8 6 4 2 0

6
113

4
117 121 125 10

2

0

2

4 6 IT(RMS) / A

8

0 -50

0

50 Tmb / C

100

150

Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle.
BT137 BT137

Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb.
BT137

1000

ITSM / A...