Culititititos

BC546/547/548/549/550

BC546/547/548/549/550
Switching and Applications
• High Voltage: BC546, VCEO=65V
• Low Noise: BC549, BC550
• Complement to BC556 ... BC560

TO-92

1

1. Collector 2. Base 3. Emitter

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO

Collector-Base Voltage

Parameter
: BC546
: BC547/550
: BC548/549Value
80
50
30

Units
V
V
V

VCEO

Collector-Emitter Voltage : BC546
: BC547/550
: BC548/549

65
45
30

V
V
V

VEBO

Emitter-Base Voltage

6
5

V
V

IC

Collector Current (DC)

100

mA

PC

Collector Power Dissipation

500

mW

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

-65 ~ 150

°C

: BC546/547
:BC548/549/550

Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
ICBO

Parameter
Collector Cut-off Current

Test Condition
VCB=30V, IE=0

Min.

Typ.

110

hFE

DC Current Gain

VCE=5V, IC=2mA

VCE (sat)

Collector-Emitter Saturation Voltage

IC=10mA, IB=0.5mA
IC=100mA, IB=5mA

90
200

VBE (sat)

Base-Emitter Saturation Voltage

IC=10mA, IB=0.5mAIC=100mA, IB=5mA

700
900

VBE (on)

Base-Emitter On Voltage

VCE=5V, IC=2mA
VCE=5V, IC=10mA

Max.
15

580

800

660

fT

Current Gain Bandwidth Product

VCE=5V, IC=10mA, f=100MHz

Output Capacitance

VCB=10V, IE=0, f=1MHz

Input Capacitance

VEB=0.5V, IC=0, f=1MHz

Noise Figure

VCE=5V, IC=200µA
f=1KHz, RG=2KΩ
VCE=5V, IC=200µA
RG=2KΩ, f=30~15000MHz

700
720mV
mV

9

NF

mV
mV
mV
mV

3.5

Cib

250
600

300

Cob

: BC546/547/548
: BC549/550
: BC549
: BC550

Units
nA

2
1.2
1.4
1.4

MHz
6

pF

10
4
4
3

dB
dB
dB
dB

pF

hFE Classification
Classification

A

B

C

hFE

110 ~ 220

200 ~ 450

420 ~ 800

©2002 Fairchild Semiconductor Corporation

Rev. A2, August 2002BC546/547/548/549/550

Typical Characteristics

100

IB = 400µA

VCE = 5V

IC[mA], COLLECTOR CURRENT

IC[mA], COLLECTOR CURRENT

100

IB = 350µA
IB = 300µA

80

IB = 250µA

60

IB = 200µA
IB = 150µA

40

IB = 100µA
20

10

1

IB = 50µA
0.1
0.0

0
0

2

4

6

8

10

12

14

16

18

20

VCE = 5V

hFE, DC CURRENT GAIN

1000

100

10

1100

0.8

1.0

1.2

10000

IC = 10 IB

V BE(sat)

1000

100

V CE(sat)

10

1000

1

10

IC[mA], COLLECTOR CURRENT

100

1000

IC[A], COLLECTOR CURRENT

Figure 3. DC current Gain

Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage

1000

f=1MHz
IE = 0
10

1

0.1
1

10

100

V CB[V], COLLECTOR-BASE VOLTAGE

Figure5. Output Capacitance

©2002 Fairchild Semiconductor Corporation

1000

fT, CURRENT GAIN-BANDWIDTH PRODUCT

100

Cob[pF], CAPACITANCE

0.6

Figure 2. Transfer Characteristic

VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE

Figure 1. Static Characteristic

10

0.4

VBE[V], BASE-EMITTER VOLTAGE

VCE[V], COLLECTOR-EMITTER VOLTAGE

1

0.2

VCE = 5V

100

10

1
0.11

10

100

IC[mA], COLLECTOR CURRENT

Figure 6. Current Gain Bandwidth Product

Rev. A2, August 2002

BC546/547/548/549/550

Package Dimensions

TO-92
+0.25

4.58 ±0.20

4.58 –0.15

±0.10

14.47 ±0.40

0.46

1.27TYP
[1.27 ±0.20]

1.27TYP
[1.27 ±0.20]
±0.20

(0.25)

+0.10

0.38 –0.05

1.02 ±0.10

3.86MAX

3.60

+0.10

0.38 –0.05

(R2.29)Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation

Rev. A2, August 2002

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