Data

L293D L293DD
PUSH-PULL FOUR CHANNEL DRIVER WITH DIODES
600mA OUTPUT CURRENT CAPABILITY PER CHANNEL 1.2A PEAK OUTPUT CURRENT (non repetitive) PER CHANNEL ENABLE FACILITY OVERTEMPERATURE PROTECTION LOGICAL ”0” INPUT VOLTAGE UP TO 1.5 V (HIGH NOISE IMMUNITY) INTERNAL CLAMP DIODES DESCRIPTION The Device is a monolithic integrated high voltage, high current four channel driver designed to acceptstandard DTL or TTL logic levels and drive inductive loads (such as relays solenoides, DC and stepping motors) and switching power transistors. To simplify use as two bridges each pair of channels is equipped with an enable input. A separate supply input is provided for the logic, allowing operation at a lower voltage and internal clamp diodes are included. This device is suitable for use inswitching applications at frequencies up to 5 kHz. BLOCK DIAGRAM

SO(12+4+4)

Powerdip (12+2+2)

ORDERING NUMBERS: L293DD L293D

The L293D is assembled in a 16 lead plastic packaage which has 4 center pins connected together and used for heatsinking The L293DD is assembled in a 20 lead surface mount which has 8 center pins connected together and used for heatsinking.

June 1996

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ABSOLUTE MAXIMUM RATINGS
Symbol VS V SS Vi V en Io P tot Tstg, Tj Supply Voltage Logic Supply Voltage Input Voltage Enable Voltage Peak Output Current (100 µs non repetitive) Total Power Dissipation at Tpins = 90 °C Storage and Junction Temperature Parameter Value 36 36 7 7 1.2 4 – 40 to 150 Unit V V V V A W °C

PIN CONNECTIONS (Top view)

SO(12+4+4)

Powerdip(12+2+2)

THERMALDATA
Symbol Rth j-pins Rth j-amb Rth j-case Decription Thermal Resistance Junction-pins Thermal Resistance junction-ambient Thermal Resistance Junction-case max. max. max. DIP – 80 14 SO 14 50 (*) – Unit °C/W °C/W

(*) With 6sq. cm on board heatsink.

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ELECTRICAL CHARACTERISTICS (for each channel, VS = 24 V, VSS = 5 V, Tamb = 25 °C, unless otherwise specified)
Symbol VSV SS IS Parameter Supply Voltage (pin 10) Logic Supply Voltage (pin 20) Total Quiescent Supply Current (pin 10) Vi = L ; IO = 0 ; Ven = H Vi = H ; IO = 0 ; Ven = H Ven = L ISS Total Quiescent Logic Supply Current (pin 20) Vi = L ; IO = 0 ; Ven = H Vi = H ; IO = 0 ; Ven = H Ven = L V IL VIH IIL IIH Ven L Ven H Ien L Ien H VCE(sat)H VCE(sat)L VF tr tf ton toff
(*) See fig. 1.

Test ConditionsMin. VSS 4.5

Typ.

Max. 36 36

Unit V V mA mA mA mA mA mA V V V µA µA V V V µA µA V V V ns ns ns ns

2 16 44 16 16 – 0.3

6 24 4 60 22 24 1.5 VSS 7 – 10

Input Low Voltage (pin 2, 9, 12, 19) Input High Voltage (pin 2, 9, 12, 19) Low Voltage Input Current (pin 2, 9, 12, 19) High Voltage Input Current (pin 2, 9, 12, 19) Enable Low Voltage (pin 1, 11) Enable High Voltage (pin 1, 11) LowVoltage Enable Current (pin 1, 11) High Voltage Enable Current (pin 1, 11) Source Output Saturation Voltage (pins 3, 8, 13, 18) Sink Output Saturation Voltage (pins 3, 8, 13, 18) Clamp Diode Forward Voltage Rise Time (*) Fall Time (*) Turn-on Delay (*) Turn-off Delay (*) VSS ≤ 7 V VSS > 7 V Ven L = 1.5 V 2.3 V ≤ Ven H ≤ VSS – 0.6 V IO = – 0.6 A IO = + 0.6 A IO = 600nA 0.1 to 0.9 VO 0.9 to 0.1 VO0.5 Vi to 0.5 VO 0.5 Vi to 0.5 VO VSS ≤ 7 V VSS > 7 V VIL = 1.5 V 2.3 V ≤ VIH ≤ VSS – 0.6 V

2.3 2.3

30 – 0.3 2.3 2.3 – 30

100 1.5 VSS 7 – 100 ± 10

1.4 1.2 1.3 250 250 750 200

1.8 1.8

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TRUTH TABLE (one channel)
Inpu t H L H L Enable (*) H H L L Output H L Z Z

Figure 1: Switching Times

Z = High output impedance (*) Relative to the considered channelFigure 2: Junction to ambient thermal resistance vs. area on board heatsink (SO12+4+4 package)

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POWERDIP16 PACKAGE MECHANICAL DATA
DIM. MIN. a1 B b b1 D E e e3 F I L Z 3.30 1.27 8.80 2.54 17.78 7.10 5.10 0.130 0.050 0.38 0.51 0.85 0.50 0.50 20.0 0.346 0.100 0.700 0.280 0.201 0.015 1.40 mm TYP. MAX. MIN. 0.020 0.033 0.020 0.020 0.787 0.055 inch TYP. MAX.

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