Datasheet C106

MOTOROLA

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by C106/D

SEMICONDUCTOR TECHNICAL DATA

C106
Series *

Silicon Controlled Rectifier
Reverse Blocking Triode Thyristors

*Motorola preferred devices

. . . Glassivated PNPN devices designed for high volume consumer applications such
as temperature, light, and speed control; process and remote control, and warning
systems where reliability ofoperation is important.
•
•
•
•

SCRs
4 AMPERES RMS
50 thru 600 VOLTS

Glassivated Surface for Reliability and Uniformity
Power Rated at Economical Prices
Practical Level Triggering and Holding Characteristics
Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability

G
A

K

A

G

A

K

CASE 77-08
(TO-225AA)
STYLE 2

MAXIMUMRATINGS (TJ = 25°C unless otherwise noted.)
Rating
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(RGK = 1 kΩ)
C106F
(TC = –40° to 110°C)
C106A
C106B
C106D
C106M

Symbol
VDRM
or
VRRM

Value

Unit
Volts

50
100
200
400
600

RMS Forward Current
(All Conduction Angles)

IT(RMS)

4

Amps

Average Forward Current
(TA = 30°C)

IT(AV)

2.55

Amps

PeakNon-repetitive Surge Current
(1/2 Cycle, 60 Hz, TJ = –40 to +110°C)

ITSM

20

Amps

I2t

1.65

A2s

PGM

0.5

Watt

PG(AV)

0.1

Watt

IGFM

0.2

Amp

Circuit Fusing (t = 8.3 ms)
Peak Gate Power
Average Gate Power
Peak Forward Gate Current

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage;however, (cont.)
positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a
constant current source such that the voltage ratings of the devices are exceeded.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Thyristor Device Data
© Motorola, Inc. 1995

1

C106Series
MAXIMUM RATINGS — continued
Rating

Symbol

Value

Unit

VGRM

6

Volts

TJ

–40 to +110

°C

Tstg

–40 to +150

°C

—

Peak Reverse Gate Voltage

6

in. lb.

Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque(1)

1. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb.does not appreciably lower
case-to-sink thermal resistance. Anode lead and heatsink contact pad are common.
For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C. For optimum
results, an activated flux (oxide removing) is recommended.

THERMAL CHARACTERISTICS (TC = 25°C, RGK = 1 kΩ unless otherwise noted.)
CharacteristicSymbol

Max

Unit

Thermal Resistance, Junction to Case

RθJC

3

°C/W

Thermal Resistance, Junction to Ambient

RθJA

75

°C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic

Symbol

Min

Typ

Max

Unit

—
—

—
—

10
100

µA
µA

—

—

2.2

Volts

—
—

30
75

200
500

0.4
0.5
0.2

—
—
—

0.8
1
—IHX

0.3
0.4
0.14

—
—
—

3
6
2

mA

dv/dt

—

8

—

V/µs

Turn-On Time

tgt

—

1.2

—

µs

Turn-Off Time

tq

—

40

—

µs

Peak Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, RGK = 1000 Ohms) TJ = 25°C
TJ = 110°C

IDRM, IRRM

Forward “On” Voltage
(IFM = 1 A Peak)

VTM

Gate Trigger Current (Continuous dc)
(VAK = 6Vdc, RL = 100 Ohms)
(VAK = 6 Vdc, RL = 100 Ohms, TC = –40°C)

IGT

Gate Trigger Voltage (Continuous dc)
(VAK = 6 Vdc, RL = 100 Ohms, RGK = 1000 Ohms)
(VAK = Rated VDRM, RL = 3000 Ohms,
RGK = 1000 Ohms, TJ = 110°C)

VGT

TJ = 25°C

FIGURE 1 – AVERAGE CURRENT DERATING
110

TC, CASE TEMPERATURE ( °C)

100
DC

80
70
60
50
HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD.
50 to...