Datasheet

Páginas: 8 (1965 palabras) Publicado: 8 de agosto de 2011
MONOLITHIC AMPLIFIERS
BROADBAND
DC to 8 GHz
ERA ERA-SM

50Ω

low power, up to +13.5 dBm output
J
FREQ. GHz MODELu NO.
ERA-1 ERA-2 ERA-3 ERA-1SM ERA-21SM ERA-2SM ERA-33SM ERA-3SM ERA-8SM fL - fU DC-8 DC-6 DC-3 DC-8 DC-8 DC-6 DC-3 DC-3 DC-2 0.1 1 over frequency, GHz 2 3 4 6 8 8.2 — — 8.2 8.9 — — — — Min.@ 2 GHz 9 13 16 9 11.2 13 15 16 17

all specifications at 25°C
MAXIMUM DYNAMICPOWER (dBm) RANGE at 2 GHz* at 2 GHz*
Output Input (1 dB (no Comp.) Typ. Min. dmg) 12.0 10.0 13.0 11.0 12.5 9.0 12.0 10.0 12.6 10.6 13.0 11.0 13.5 11.5 12.5 9.0 12.5 — 15 15 13 15 15 15 13 13 13

GAIN , dB Typical

VSWR (:1) Typ.

In Out NF IP3 Device (dB) (dBm) DC-3 3-fU** DC-3 3-fU** I P Current Volt. Typ. Typ. GHz GHz GHz GHz (mA) (mW) (mA) Typ Min Max 4.3 26 4.0 26 3.5 25 4.3 26 4.7 26 4.026 1.5 1.8 1.3 1.4 1.5 — 1.5 1.8 1.1 1.4 1.3 1.4 1.5 1.9 1.2 1.6 1.4 — 1.5 1.9 1.3 1.9 1.2 1.6 1.25 — 1.4 — 1.8 2.2 75 330 75 330 75 330 75 330 75 330 75 330 75 330 75 330 65 250 40 40 35 40 40 40 40 35 36 3.4 3.0 4.1 3.4 3.0 4.1 3.2 3.0 4.1 3.4 3.0 4.1 3.5 3.0 4.1 3.4 3.0 4.1 4.3 3.8 4.8 3.2 3.0 4.1 3.7 3.2 4.2

ABSOLUTE MAX. RATING3

DC OPERATING POWER4 at Pin 3

THERMAL CASE RESIS- STYLETANCE
θ jc Typ. °C/W 178 155 154 183 194 160 140 159 140 Note B

C O N N E C T I O N

PRICE $

Qty. (30)

12.3 12.1 11.8 10.9 9.7 7.9 16.2 15.8 15.2 14.4 13.1 11.2 22.1 21.0 18.7 16.8 — — 12.3 12.1 11.8 10.9 9.7 7.9 14.2 13.9 13.2 12.2 10.8 8.7 16.2 15.8 15.2 14.4 13.1 11.2 19.3 18.7 17.4 15.9 — 22.1 21.0 18.7 16.8 — 31.5 25.0 19.0 15.0 12.0 — — —

VV105 cb 1.37 VV105 cb 1.52 VV105 cb1.67 WW107 cb 1.42 WW107 cb 1.57 WW107 cb 1.57 WW107 cb 1.72 WW107 cb 1.72 WW107 cb 1.22

3.9 28.5 1.6 — 3.5 25 1.5 — 3.1 25 1.4 1.8

see suggested PCB layout PL-075 for ERA models

features
l l l l

low thermal resistance miniature microwave amplifier frequency range, DC to 8 GHz, usable to 10 GHz up to 18.4 dBm typ. (16.5 dBm min) output power

model identification
Model
ERA-1,ERA-1SM ERA-2, ERA-2SM ERA-21SM ERA-3, ERA-3SM ERA-33SM ERA-4,-4SM ERA-4XSM ERA-5, ERA-5SM ERA-50SM ERA-51SM ERA-5XSM ERA-6, ERA-6SM ERA-8SM

marking (see note below)
1 2 21 3 33 4 4X 5 50 51 5X 6 E8

absolute maximum ratings
operating temperature: -45°C to 85°C storage temperature: -65° to 150°C

Note: Prefix letter (optional) designates assembly — — — location. Suffix letters (optional) arefor wafer identification. prefix letter number

NOTES:
Aqueous washable at 1 GHz for ERA-4,5,6, 4SM,4XSM ,5SM,5XSM, 50SM, 51SM, 6SM, 8SM. fu is the upper frequency limit for each model as shown in the table; for ERA-8SM VSWR (In & Out) is specified at DC-1GHz & 1-4 GHz. *** Gain and VSWR are specified at 1.5 GHz. J Low frequency cutoff determined by external coupling capacitors. A. Environmentalspecifications and re-flow soldering information available in General Information Section. B. Units are non-hermetic unless otherwise noted. For details on case dimensions & finishes see “Case Styles & Outline Drawings”. C. Prices and Specifications subject to change without notice. D. For Quality Control Procedures see Table of Contents, Section 0, "Mini-Circuits Guarantees Quality" article. ForEnvironmental Specifications see Amplifier Selection Guide. 1. Model number designated by alphanumeric code marking. 2. ERA-SM models available on tape and reel. 3. Permanent damage may occur if any of these limits are exceeded. These ratings are not intended for continuous normal operation. 4. Supply voltage must be connected to pin 3 through a bias resistor in order to prevent damage. See"Biasing MMIC Amplifiers" in minicircuits.com/ application.html. Reliability predictions are applicable at specified current & normal operating conditions. u * **

suffix letter

MTTF vs. Junction Temp. (For all ERA Models except ERA-5, ERA-5SM)

1,000,000 100,000

MTTF (years)

10,000 1,000 100 10 1 80 100 120 140 160 180 200

Junction Temp. (˚C)

Mini-Circuits
168

®

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