Datasheet

Páginas: 8 (1796 palabras) Publicado: 18 de septiembre de 2012
1N5223B through 1N5258B
Silicon Epitaxial Planar Zener Diodes for Voltage Regulation

ADE-208-137B (Z)
Rev.2
Dec. 2001
Features
• Glass package DO-35 structure ensures high reliability.
• Wide spectrum from 2.7 V through 36 V of zener voltage provide flexible application.

Ordering Information
Type No.

Cathode band

Mark

Package Code

1N5223B through
1N5258B

Black

TypeNo.

DO-35

Pin Arrangement

2

1
Type No.
Cathode band

1. Cathode
2. Anode

1N5223B through 1N5258B
Absolute Maximum Ratings
(Ta = 25°C)
Item

Symbol

Power dissipation

Value

Pd

500
1

Surge power dissipation

Pd(surge) *

Lead temperature

Unit
mW

10

W

2

230

°C

3

200

°C

–65 to +200

°C

TL *

Junction temperature

Tj*

Storage temperature

Tstg

Notes: 1. Non-recurrent square wave, pw = 8.3 ms, Tj = 55°C, Tj is prior to surge.
2. Less than 1/16" from the case for 10 seconds.
3. By standard printed board, see fig 2.

Electrical Characteristics
(Ta = 25°C)
IR (µA)

VZ (V)
Test
Condition

IZ (mA)

ZZT (Ω)
Test
Condition

ZZK (Ω)
Test
Condition

γZ (%/°C) * VF* (V)
1

2

TestCondition

Max

VR (V)

Max

IZT (mA)

Max

IZK (mA) Max

Max

1N5223B 2.7 ± 5 (%) 20

75

1.0

30

20

1300

0.25

-0.08

1.1

1N5224B 2.8 ± 5 (%) 20

75

1.0

30

20

1400

0.25

-0.08

1.1

1N5225B 3.0 ± 5 (%) 20

50

1.0

29

20

1600

0.25

-0.075

1.1

1N5226B 3.3 ± 5 (%) 20

25

1.0

28

20

1600

0.25

-0.071.1

1N5227B 3.6 ± 5 (%) 20

15

1.0

24

20

1700

0.25

-0.065

1.1

1N5228B 3.9 ± 5 (%) 20

10

1.0

23

20

1900

0.25

-0.06

1.1

1N5229B 4.3 ± 5 (%) 20

5

1.0

22

20

2000

0.25

±0.055

1.1

1N5230B 4.7 ± 5 (%) 20

5

2.0

19

20

1900

0.25

±0.03

1.1

1N5231B 5.1 ± 5 (%) 20

5

2.0

17

20

16000.25

±0.03

1.1

1N5232B 5.6 ± 5 (%) 20

5

3.0

11

20

1600

0.25

+0.038

1.1

1N5233B 6.0 ± 5 (%) 20

5

3.5

7

20

1600

0.25

+0.038

1.1

1N5234B 6.2 ± 5 (%) 20

5

4.0

7

20

1000

0.25

+0.045

1.1

1N5235B 6.8 ± 5 (%) 20

3

5.0

5

20

750

0.25

+0.05

1.1

1N5236B 7.5 ± 5 (%) 20

3

6.0

6

20500

0.25

+0.058

1.1

1N5237B 8.2 ± 5 (%) 20

3

6.5

8

20

500

0.25

+0.062

1.1

1N5238B 8.7 ± 5 (%) 20

3

6.5

8

20

600

0.25

+0.065

1.1

Notes: 1. 1N5223 to 1N5242: IZ = 7.5 mA, 1N5243 to 1N5258: IZ = IZ,, Ta = 25°C to 125°C
2. Tested with DC, IF = 200 mA

Rev.2, Dec. 2001, page 2 of 7

1N5223B through 1N5258B
ElectricalCharacteristics (cont)
(Ta = 25°C)
IR (µA)

VZ (V)
Test
Condition

IZ (mA)

ZZT (Ω)
Test
Condition

ZZK (Ω)
Test
Condition

γZ (%/°C) * VF* (V)
1

2

Test
Condition

Max

VR (V)

Max

IZT (mA)

Max

IZK (mA) Max

Max

1N5239B 9.1 ± 5 (%) 20

3

7.5

10

20

600

0.25

+0.068

1.1

1N5240B 10 ± 5 (%)

20

3

8.0

17

20

600

0.25

+0.0751.1

1N5241B 11 ± 5 (%)

20

2

8.4

22

20

600

0.25

+0.076

1.1

1N5242B 12 ± 5 (%)

20

1

9.1

30

20

600

0.25

+0.077

1.1

1N5243B 13 ± 5 (%)

9.5

0.5

9.9

13

9.5

600

0.25

+0.079

1.1

1N5244B 14 ± 5 (%)

9.0

0.1

10

15

9.0

600

0.25

+0.082

1.1

1N5245B 15 ± 5 (%)

8.5

0.1

11

168.5

600

0.25

+0.082

1.1

1N5246B 16 ± 5 (%)

7.8

0.1

12

17

7.8

600

0.25

+0.083

1.1

1N5247B 17 ± 5 (%)

7.4

0.1

13

19

7.4

600

0.25

+0.084

1.1

1N5248B 18 ± 5 (%)

7.0

0.1

14

21

7.0

600

0.25

+0.085

1.1

1N5249B 19 ± 5 (%)

6.6

0.1

14

23

6.6

600

0.25

+0.086

1.1

1N5250B 20...
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