Datasheet
Silicon Epitaxial Planar Zener Diodes for Voltage Regulation
ADE-208-137B (Z)
Rev.2
Dec. 2001
Features
• Glass package DO-35 structure ensures high reliability.
• Wide spectrum from 2.7 V through 36 V of zener voltage provide flexible application.
Ordering Information
Type No.
Cathode band
Mark
Package Code
1N5223B through
1N5258B
Black
TypeNo.
DO-35
Pin Arrangement
2
1
Type No.
Cathode band
1. Cathode
2. Anode
1N5223B through 1N5258B
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Power dissipation
Value
Pd
500
1
Surge power dissipation
Pd(surge) *
Lead temperature
Unit
mW
10
W
2
230
°C
3
200
°C
–65 to +200
°C
TL *
Junction temperature
Tj*
Storage temperature
Tstg
Notes: 1. Non-recurrent square wave, pw = 8.3 ms, Tj = 55°C, Tj is prior to surge.
2. Less than 1/16" from the case for 10 seconds.
3. By standard printed board, see fig 2.
Electrical Characteristics
(Ta = 25°C)
IR (µA)
VZ (V)
Test
Condition
IZ (mA)
ZZT (Ω)
Test
Condition
ZZK (Ω)
Test
Condition
γZ (%/°C) * VF* (V)
1
2
TestCondition
Max
VR (V)
Max
IZT (mA)
Max
IZK (mA) Max
Max
1N5223B 2.7 ± 5 (%) 20
75
1.0
30
20
1300
0.25
-0.08
1.1
1N5224B 2.8 ± 5 (%) 20
75
1.0
30
20
1400
0.25
-0.08
1.1
1N5225B 3.0 ± 5 (%) 20
50
1.0
29
20
1600
0.25
-0.075
1.1
1N5226B 3.3 ± 5 (%) 20
25
1.0
28
20
1600
0.25
-0.071.1
1N5227B 3.6 ± 5 (%) 20
15
1.0
24
20
1700
0.25
-0.065
1.1
1N5228B 3.9 ± 5 (%) 20
10
1.0
23
20
1900
0.25
-0.06
1.1
1N5229B 4.3 ± 5 (%) 20
5
1.0
22
20
2000
0.25
±0.055
1.1
1N5230B 4.7 ± 5 (%) 20
5
2.0
19
20
1900
0.25
±0.03
1.1
1N5231B 5.1 ± 5 (%) 20
5
2.0
17
20
16000.25
±0.03
1.1
1N5232B 5.6 ± 5 (%) 20
5
3.0
11
20
1600
0.25
+0.038
1.1
1N5233B 6.0 ± 5 (%) 20
5
3.5
7
20
1600
0.25
+0.038
1.1
1N5234B 6.2 ± 5 (%) 20
5
4.0
7
20
1000
0.25
+0.045
1.1
1N5235B 6.8 ± 5 (%) 20
3
5.0
5
20
750
0.25
+0.05
1.1
1N5236B 7.5 ± 5 (%) 20
3
6.0
6
20500
0.25
+0.058
1.1
1N5237B 8.2 ± 5 (%) 20
3
6.5
8
20
500
0.25
+0.062
1.1
1N5238B 8.7 ± 5 (%) 20
3
6.5
8
20
600
0.25
+0.065
1.1
Notes: 1. 1N5223 to 1N5242: IZ = 7.5 mA, 1N5243 to 1N5258: IZ = IZ,, Ta = 25°C to 125°C
2. Tested with DC, IF = 200 mA
Rev.2, Dec. 2001, page 2 of 7
1N5223B through 1N5258B
ElectricalCharacteristics (cont)
(Ta = 25°C)
IR (µA)
VZ (V)
Test
Condition
IZ (mA)
ZZT (Ω)
Test
Condition
ZZK (Ω)
Test
Condition
γZ (%/°C) * VF* (V)
1
2
Test
Condition
Max
VR (V)
Max
IZT (mA)
Max
IZK (mA) Max
Max
1N5239B 9.1 ± 5 (%) 20
3
7.5
10
20
600
0.25
+0.068
1.1
1N5240B 10 ± 5 (%)
20
3
8.0
17
20
600
0.25
+0.0751.1
1N5241B 11 ± 5 (%)
20
2
8.4
22
20
600
0.25
+0.076
1.1
1N5242B 12 ± 5 (%)
20
1
9.1
30
20
600
0.25
+0.077
1.1
1N5243B 13 ± 5 (%)
9.5
0.5
9.9
13
9.5
600
0.25
+0.079
1.1
1N5244B 14 ± 5 (%)
9.0
0.1
10
15
9.0
600
0.25
+0.082
1.1
1N5245B 15 ± 5 (%)
8.5
0.1
11
168.5
600
0.25
+0.082
1.1
1N5246B 16 ± 5 (%)
7.8
0.1
12
17
7.8
600
0.25
+0.083
1.1
1N5247B 17 ± 5 (%)
7.4
0.1
13
19
7.4
600
0.25
+0.084
1.1
1N5248B 18 ± 5 (%)
7.0
0.1
14
21
7.0
600
0.25
+0.085
1.1
1N5249B 19 ± 5 (%)
6.6
0.1
14
23
6.6
600
0.25
+0.086
1.1
1N5250B 20...
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