Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors

Order this document by BC546/D

NPN Silicon
COLLECTOR 1 2 BASE 3 EMITTER

BC546, B BC547, A, B, C BC548, A, B, C

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation@ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC 546 65 80 BC 547 45 50 6.0 100 625 5.0 1.5 12 – 55 to +150 BC 548 30 30 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C

1 2 3

CASE 29–04, STYLE 17 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junctionto Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) Collector – Base Breakdown Voltage (IC = 100 µAdc) Emitter – Base Breakdown Voltage (IE = 10 mA, IC = 0) Collector Cutoff Current (VCE = 70 V, VBE = 0) (VCE= 50 V, VBE = 0) (VCE = 35 V, VBE = 0) (VCE = 30 V, TA = 125°C) BC546 BC547 BC548 BC546 BC547 BC548 BC546 BC547 BC548 BC546 BC547 BC548 BC546/547/548 V(BR)CEO 65 45 30 80 50 30 6.0 6.0 6.0 — — — — — — — — — — — — — 0.2 0.2 0.2 — — — — — — — — — — 15 15 15 4.0 V

V(BR)CBO

V

V(BR)EBO

V

ICES nA

µA

REV 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola,Inc. 1996

1

BC546, B BC547, A, B, C BC548, A, B, C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 10 µA, VCE = 5.0 V) hFE BC547A/548A BC546B/547B/548B BC548C BC546 BC547 BC548 BC547A/548A BC546B/547B/548B BC547C/BC548C BC547A/548A BC546B/547B/548B BC548C VCE(sat) — — — VBE(sat)VBE(on) 0.55 — — — 0.7 0.77 — 0.09 0.2 0.3 0.7 0.25 0.6 0.6 — V V — — — 110 110 110 110 200 420 — — — 90 150 270 — — — 180 290 520 120 180 300 — — — 450 800 800 220 450 800 — — — V —

(IC = 2.0 mA, VCE = 5.0 V)

(IC = 100 mA, VCE = 5.0 V)

Collector – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) (IC = 10 mA, IB = See Note 1) Base – Emitter SaturationVoltage (IC = 10 mA, IB = 0.5 mA) Base–Emitter On Voltage (IC = 2.0 mA, VCE = 5.0 V) (IC = 10 mA, VCE = 5.0 V)

SMALL–SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) fT BC546 BC547 BC548 Cobo Cibo hfe BC546 BC547/548 BC547A/548A BC546B/547B/548B BC547C/548C NF BC546 BC547 BC548 — — — 2.0 2.0 2.0 10 10 10 125 125 125 240 450 — — 220 330 600 500 900 260500 900 dB 150 150 150 — — 300 300 300 1.7 10 — — — 4.5 — pF pF — MHz

Output Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Small–Signal Current Gain (IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz)

Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2 kW, f = 1.0 kHz, ∆f = 200 Hz)

Note 1: IB is value for which IC = 11 mA at VCE = 1.0 V.

2Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC546, B BC547, A, B, C BC548, A, B, C

2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 VCE = 10 V TA = 25°C V, VOLTAGE (VOLTS)

1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.5 50 2.0 5.0 10 1.0 20 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC,COLLECTOR CURRENT (mAdc) 50 70 100 VBE(on) @ VCE = 10 V TA = 25°C VBE(sat) @ IC/IB = 10

Figure 1. Normalized DC Current Gain
2.0 VCE , COLLECTOR–EMITTER VOLTAGE (V) TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = IC = 50 mA 10 mA 20 mA 0.8 IC = 100 mA θVB, TEMPERATURE COEFFICIENT (mV/ °C) 1.0

Figure 2. “Saturation” and “On” Voltages

–55°C to +125°C 1.2 1.6 2.0 2.4 2.8

0.4

0

0.02

0.1 1.0...