Detalles

Ordering number : ENN7215A

TT2140LS

TT2140LS
Features
• • • • •

NPN Triple Diffused Planar Silicon Transistor

Color TV Horizontal Deflection Output Applications

High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode.

Specifications
Absolute Maximum Ratings at Ta=25°C
ParameterCollector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions Ratings 1500 800 6 6 15 2.0 30 150 --55 to +150 Unit V V V A A W W °C °C

Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter CutoffCurrent Collector Sustain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage DC Current Gain Diode Forward Voltage Fall Time Symbol ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat) hFE1 hFE2 VF tf Conditions VCB=800V, IE=0 VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 IC=3.15A, IB=0.63A IC=3.15A, IB=0.63A VCE=5V, IC=0.5A VCE=5V, IC=3.5A IEC=6A IC=2A,IB1=0.4A, IB2=-0.8A 10 5 8 2 0.3 V µs 800 40 130 3 1.5 Ratings min typ max 10 1.0 Unit µA mA V mA V V

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result inserious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listedin products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31005KC TS IM TB-00000887 / 53003 TS IM TA-100066 No.7215-1/4

TT2140LS
Package Dimensions unit : mm 2079D
10.0 3.2
3.5 7.2

Switching Time Test Circuit

IB1
4.5

OUTPUTIB2
2.8

INPUT PW=20µs D.C.≤1% RB VR 50Ω + 100µF + 470µF VCC=200V RL=100Ω

16.1

16.0

0.6

3.6

0.9

VBE= --5V
1.2
14.0

1.2

0.75 1 2 3
2.4

0.7

1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI(LS)

2.55

2.55

A

6

IC -- VCE
2.0
1.4A
1.6A

7

IC -- VBE
VCE=5V

5

Collector Current, IC -- A

Collector Current, IC -- A

1.8A
4

1.2A1.0A 0.8A 0.6A 0.4A

6

5

4

3

0.2A
2

3

2

0.05A
1

1

0 0 1 2 3 4 5 6 7 8

IB=0
9 10

0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IT01811

Collector-to-Emitter Voltage, VCE -- V
5 3 2

IT01810 5

hFE -- IC

Base-to-Emitter Voltage, VBE -- V

VCE(sat) -- IC

Ta= 120 °C 25°C --40 °C

VCE=5V

IC / IB=5

1 Ta=

20°

C

Collector-to-Emitter SaturationVoltage, VCE(sat) -- V

3 2

DC Current Gain, hFE

2
10 7 5 3 2

5°C
° -40 C

1.0 7 5 3 2 0.1 7 5

Ta= --40° C 25°C

120°C
2 3 5 7 1.0 2 3 5 7 10 IT01813

1.0 0.1

2

3

5

7

1.0

2

3

5

Collector Current, IC -- A

10 IT01812

7

3 0.1

Collector Current, IC -- A

No.7215-2/4

TT2140LS
5 3

SW Time -- IC
tstg
Switching Time, SW Time -- µsVCC=200V IC / IB1=5 IB2 / IB1=2 R load

10 7 5 3 2

SW Time -- IB2
VCC=200V IC=2A IB1=0.4A R load

Switching Time, SW Time -- µs

2

ts tg

1.0 7 5 3 2

1.0 7 5 3 2

tf

tf

0.1 0.1 2 3 5 7 1.0 2 3 5

5 3 2

Forward Bias A S O
ICP=15A

Collector Current, IC -- A

10 IT01814

7

0.1 0.1

2

3

5

7

1.0

2

3

5 IT01815

5 3 2

Reverse Bias A S O...