Diodos
Páginas: 2 (370 palabras)
Publicado: 15 de mayo de 2012
1N4148 / 1N4448
FAST SWITCHING DIODE
Features
·
·
·
Fast Switching Speed
General Purpose Rectification
Silicon Epitaxial Planar Construction
B
A
A
·
·
C
D
MechanicalData
Case: DO-35
Leads: Solderable per MIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: Type Number
Weight: 0.13 grams (approx.)
DO-35
Min
A
25.40
¾
B
¾
4.00
C¾
0.60
D
·
·
·
Dim
Max
¾
2.00
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Symbol
1N4148
1N4448
Unit
VRM100
V
VRRM
VRWM
VR
75
V
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VR(RMS)
RMS Reverse Voltage53
V
Forward Continuous Current (Note 1)
IFM
Average Rectified Output Current (Note 1)
IO
150
mA
IFSM
1.0
2.0
A
Pd
500
1.68
mW
mW/°C
RqJA
300
K/WTj , TSTG
-65 to +175
°C
Non-Repetitive Peak Forward Surge Current @ t = 1.0s
@ t = 1.0ms
Power Dissipation (Note 1)
Derate Above 25°C
Thermal Resistance, Junction to Ambient Air (Note 1)Operating and Storage Temperature Range
Electrical Characteristics
300
500
mA
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
VFM
¾
0.62
¾
1.00.72
1.0
V
IF = 10mA
IF = 5.0mA
IF = 100mA
Maximum Peak Reverse Current
IRM
¾
5.0
50
30
25
mA
mA
mA
nA
VR = 75V
VR = 70V, Tj = 150°C
VR = 20V, Tj = 150°C
VR = 20VCapacitance
Cj
¾
4.0
pF
VR = 0, f = 1.0MHz
Reverse Recovery Time
trr
¾
4.0
ns
IF = 10mA to IR =1.0mA
VR = 6.0V, RL = 100W
Maximum Forward Voltage
1N4148
1N44481N4448
Max
Unit
Test Condition
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
DS12019 Rev. B-2
1 of 2
1N4148 / 1N4448
10,000
100
IR,...
FAST SWITCHING DIODE
Features
·
·
·
Fast Switching Speed
General Purpose Rectification
Silicon Epitaxial Planar Construction
B
A
A
·
·
C
D
MechanicalData
Case: DO-35
Leads: Solderable per MIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: Type Number
Weight: 0.13 grams (approx.)
DO-35
Min
A
25.40
¾
B
¾
4.00
C¾
0.60
D
·
·
·
Dim
Max
¾
2.00
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Symbol
1N4148
1N4448
Unit
VRM100
V
VRRM
VRWM
VR
75
V
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VR(RMS)
RMS Reverse Voltage53
V
Forward Continuous Current (Note 1)
IFM
Average Rectified Output Current (Note 1)
IO
150
mA
IFSM
1.0
2.0
A
Pd
500
1.68
mW
mW/°C
RqJA
300
K/WTj , TSTG
-65 to +175
°C
Non-Repetitive Peak Forward Surge Current @ t = 1.0s
@ t = 1.0ms
Power Dissipation (Note 1)
Derate Above 25°C
Thermal Resistance, Junction to Ambient Air (Note 1)Operating and Storage Temperature Range
Electrical Characteristics
300
500
mA
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
VFM
¾
0.62
¾
1.00.72
1.0
V
IF = 10mA
IF = 5.0mA
IF = 100mA
Maximum Peak Reverse Current
IRM
¾
5.0
50
30
25
mA
mA
mA
nA
VR = 75V
VR = 70V, Tj = 150°C
VR = 20V, Tj = 150°C
VR = 20VCapacitance
Cj
¾
4.0
pF
VR = 0, f = 1.0MHz
Reverse Recovery Time
trr
¾
4.0
ns
IF = 10mA to IR =1.0mA
VR = 6.0V, RL = 100W
Maximum Forward Voltage
1N4148
1N44481N4448
Max
Unit
Test Condition
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
DS12019 Rev. B-2
1 of 2
1N4148 / 1N4448
10,000
100
IR,...
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