Diodos

iodos R ECTRO N
S EM ICO NDU CTO R

1 N4150

T ECHN ICAL SPECIFICATIO N

1 N4150 SIGNAL DIODE
Absolute Maximum Ratings (Ta=25 °C)
Items
Symbol
Ratings
Unit
R everse Voltage
VR
50
V
R everse Recovery
trr
4
ns
Time
P ower Dissipation
P
500
mW
3.33mW/ ° C (25 ° C)
F orward Current
IF
200
mA
J unction Temp.
Tj
-65 to 200 ° C
S torage Temp.
Tstg
-65 to 200 ° C

D imensions(DO-35 )

D O-35
26 MIN

0.457
DIA.
0.559

4.2
m ax.
2.0
DIA.
m ax.

M echanical Data
Items
P ackage
C ase
L ead/FinishC hip

Materials
DO-35
Hermetically sealed glass
Double stud/Solder Plating
Glass Passivated

E lectrical Characteristics (Ta=25 °C)
R atings
B reakdown Voltage
IR= 5.0uA
P eak Forward Surge Current PW = 1sec.
M aximum Forward Voltage
IF= 200mA
M aximumReverse Current
VR= 50V
VR= 20V, Tj= 150 ° C
M aximum Junction Capacitance
VR= 0, f= 1 MHz
M ax Reverse Recovery Time
IF= -IR= 10-200mA,to 0.1 IF

R ECTRON USA

26 MIN
Dim ensions in millim eters

Symbol
BV
IFsurge
VF

Ratings
50
1.0

Unit
V
A
V

1.0
IRuA
0.10
100

Cj

pF
2.5

trr

ns
4

1 315 John Reed Court, Industry, CA 91745
T el: (626) 333-3802 Fax: (626) 330-6296w ww.rectron.com

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