Diodos
Discrete POWER & Signal Technologies
1N4001 - 1N4007
Features • Low forward voltage drop. • High surge current capability.
DO-41
COLOR BAND DENOTES CATHODE
1.0 min (25.4)Dimensions in inches (mm)
0.205 (5.21) 0.160 (4.06)
0.107 (2.72) 0.080 (2.03) 0.034 (0.86) 0.028 (0.71)
1.0 Ampere General Purpose Rectifiers
Absolute Maximum Ratings*
Symbol
IO if(surge)PD RθJA Tstg TJ
TA = 25°C unless otherwise noted
Parameter
Average Rectified Current .375 " lead length @ TA = 75°C Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on ratedload (JEDEC method) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Storage Temperature Range Operating Junction Temperature
Value
1.0
Units
A
30 2.5 20 50-55 to +175 -55 to +150
A W mW/°C °C/W °C °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical CharacteristicsParameter
TA = 25°C unless otherwise noted
Device
4001 4002 100 70 100 4003 200 140 200 4004 400 280 400 5.0 500 1.1 30 15 4005 600 420 600 4006 800 560 800 4007 1000 700 1000 50 35 50
Units
V V VµA µA V µA pF
Peak Repetitive Reverse Voltage Maximum RMS Voltage DC Reverse Voltage (Rated VR) Maximum Reverse Current @ rated VR TA = 25°C TA = 100°C Maximum Forward Voltage @ 1.0 A Maximum FullLoad Reverse Current, Full Cycle TA = 75°C Typical Junction Capacitance VR = 4.0 V, f = 1.0 MHz
©1998 Fairchild Semiconductor Corporation
1N4001-1N4007
General Purpose Rectifiers(continued)
Typical Characteristics
Forward Current Derating Curve
1.6 FORWARD CURRENT (A) 1.4
Forward Characteristics
20 10 FORWARD CURRENT (A) 4 2 1 0.4 0.2 0.1 0.04 0.02 0.01 0.6
T J = 25ºCPulse Width = 300µS 2% Duty Cycle
1.2 1 0.8 0.6 0.4 0.2 0 0
SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" 9.0 mm LEAD LENGTHS
20
40 60 80 100 120 140 AMBIENT TEMPERATURE ( º C)...
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