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RF2126




 






 


• Commercial and Consumer Systems

• Digital Communication Systems

• Portable Battery Powered Equipment

2

• PCS Communication Systems





The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction BipolarTransistor (HBT)
process and has been designed for use as the final RF
amplifier in 2.45 GHz ISM applications such as WLAN
and POS terminals. The part will also function as the final
stage in digital PCS phone transmitters requiring linear
amplification operating between 1800MHz and
2500MHz. The device is packaged in an 8-lead plastic
package with a backside ground. The device is self-containedwith the exception of the output matching network
and power supply feed line. It produces a typical output
power level of 1W.

.157
.150

.019
.014

1
.196
.189

.123
.107
.050
.244
.230

.061
.055

Si Bi-CMOS




GaAs HBT

GaAs MESFET

.087
.071

8°MAX
0°MIN

.035
.016

.010
.007

Refer to “Handling of PSOP and PSSOP Products” on page 16-15
for specialhandling information.


  
 
Si BJT

EXPOSED
HEATSINK

.010
.004



  
 !




• Single 3V to 6.5V Supply
• 1.3W Output Power
• 12dB Gain
• 45% Efficiency

RF IN 1

8 RF OUT

RF IN 2

7 RF OUT




PC 3

BIAS
CIRCUIT

VCC 4

• Power Down Mode
• 1800MHz to 2500MHz Operation

6 RF OUT
5 RF OUT

PACKAGEBASE


 


RF2126
RF2126 PCBA

High Power Linear Amplifier
Fully Assembled Evaluation Board

GND


  



Rev A4 990429

RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA

Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com

2-65

POWER AMPLIFIERS

• 2.5GHz ISM Band Applications

RF2126
Absolute MaximumRatings
Parameter

POWER AMPLIFIERS

2

Rating

Unit

Supply Voltage (VCC)
Power Control Voltage (VPC)
DC Supply Current
Input RF Power
Output Load VSWR

-0.5 to +7.5
-0.5 to +5V
450
+20
20:1

VDC
V
mA
dBm

Operating Ambient Temperature
Storage Temperature

-40 to +85
-40 to +100

°C
°C

Parameter

Specification
Min.
Typ.
Max.

Refer to “Handling of PSOPand PSSOP Products”
on page 16-15 for special handling information.

Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).Unit

T=25 °C, VCC =6.0V, VPC =3.0V,
ZLOAD =12 Ω, Pin = 0 dBm, Freq=2450MHz,
Idle current=180mA

Overall
Frequency Range
Maximum Output Power
Maximum Output Power
Maximum Output Power
Total Power Added Efficiency
Total Power Added Efficiency
Total Power Added Efficiency
Small-signal Gain
Second Harmonic
Third Harmonic

Condition

1800
+27.0
+30.0

Input VSWR

2500

MHzdBm

+29
+31.0
45
45
45
12
-55
-60

dBm
dBm
%
%
%
dB
dBc
dBc

1.5:1

VCC =3.6V, PIN =+19dBm
VCC =4.8V, PIN =+19dBm
VCC =6.0V, PIN =+19dBm
Maximum output, VCC =3.6V
Maximum output, VCC =4.8V
Maximum output, VCC =6.0V
See Application Schematic, PIN =+17dBm

With external matching network; see application schematic

Two-tone Specification
Average Two-Tone Power
IM3IM5
IM7

-24

+27
-25
-35
-55

dBm
dBc
dBc
dBc

PEP-3dB
POUT =+24dBm for each tone
POUT =+24dBm for each tone
POUT =+24dBm for each tone

Power Control
VPC
Power Control “OFF”

1.5
0.2

3.0
0.5

3.5

V
V

3.0
270

350

6.5
410

0.5

10

V
mA
µA

To obtain 180mA idle current
Threshold voltage at device input

Power Supply
Power Supply Voltage...