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Order this document by MC1496/D

MC1496, B

Balanced Modulators/ Demodulators
These devices were designed for use where the output voltage is a product of an input voltage (signal) and a switching function (carrier). Typical applications include suppressed carrier and amplitude modulation, synchronous detection, FM detection, phase detection, and chopper applications. See Motorola ApplicationNote AN531 for additional design information. • Excellent Carrier Suppression –65 dB typ @ 0.5 MHz Excellent Carrier Suppression –50 dB typ @ 10 MHz • Adjustable Gain and Signal Handling

BALANCED MODULATORS/DEMODULATORS
SEMICONDUCTOR TECHNICAL DATA

• •

14 1

D SUFFIX PLASTIC PACKAGE CASE 751A (SO–14)

Balanced Inputs and Outputs High Common Mode Rejection –85 dB typical

This device contains 8active transistors.

P SUFFIX PLASTIC PACKAGE CASE 646

14 1

PIN CONNECTIONS
Signal Input 1 14 VEE 13 N/C 12 Output 11 N/C 10 Carrier Input 9 N/C 8 Input Carrier

Figure 1. Suppressed Carrier Output Waveform

Gain Adjust 2 Gain Adjust 3 Signal Input 4

IC = 500 kHz, IS = 1.0 kHz

Bias 5 Output 6 N/C 7

0 IC = 500 kHz IS = 1.0 kHz Log Scale Id 20

ORDERING INFORMATION Figure 2. Suppressed CarrierSpectrum
Device MC1496D MC1496P TA = 0°C to +70°C Operating Temperature Range Package SO–14 Plastic DIP Plastic DIP

40 60 499 kHz 500 kHz 501 kHz

MC1496BP TA = –40°C to +125°C

Figure 4. Amplitude–Modulation Spectrum
10 8.0 Linear Scale 6.0 4.0 2.0 IC = 500 kHz IS = 1.0 kHz 0 499 kHz 500 kHz 501 kHz IC = 500 kHz IS = 1.0 kHz

Figure 3. Amplitude Modulation Output Waveform

© Motorola, Inc. 1996Rev 4

MOTOROLA ANALOG IC DEVICE DATA

1

MC1496, B
MAXIMUM RATINGS (TA = 25°C, unless otherwise noted.)
Rating Applied Voltage (V6 – V8, V10 – V1, V12 – V8, V12 – V10, V8 – V4, V8 – V1, V10 – V4, V6 – V10, V2 – V5, V3 – V5) Differential Input Signal Maximum Bias Current Thermal Resistance, Junction–to–Air Plastic Dual In–Line Package Operating Temperature Range Storage Temperature Range
NOTE: ESDdata available upon request.

Symbol ∆V

Value 30

Unit Vdc

V8 – V10 V4 – V1 I5 RθJA TA Tstg

+5.0 ±(5 + I5Re) 10 100 0 to +70 –65 to +150

Vdc mA °C/W °C °C

ELECTRICAL CHARACTERISTICS (VCC = 12 Vdc, VEE = –8.0 Vdc, I5 = 1.0 mAdc, RL = 3.9 kΩ, Re = 1.0 kΩ, TA = Tlow to Thigh, all input and output characteristics are single–ended, unless otherwise noted.)
Characteristic Carrier Feedthrough VC =60 mVrms sine wave and offset adjusted to zero VC = 300 mVpp square wave: offset adjusted to zero offset not adjusted Carrier Suppression fS = 10 kHz, 300 mVrms fC = 500 kHz, 60 mVrms sine wave fC = 10 MHz, 60 mVrms sine wave Transadmittance Bandwidth (Magnitude) (RL = 50 Ω) Carrier Input Port, VC = 60 mVrms sine wave fS = 1.0 kHz, 300 mVrms sine wave Signal Input Port, VS = 300 mVrms sine wave|VC| = 0.5 Vdc Signal Gain (VS = 100 mVrms, f = 1.0 kHz; | VC|= 0.5 Vdc) Single–Ended Input Impedance, Signal Port, f = 5.0 MHz Parallel Input Resistance Parallel Input Capacitance Single–Ended Output Impedance, f = 10 MHz Parallel Output Resistance Parallel Output Capacitance Input Bias Current I bS fC = 1.0 kHz fC = 10 MHz fC = 1.0 kHz fC = 1.0 kHz 5 2 VCS 40 – 8 8 BW3dB – – 10 6 3 – rip cip 6 –rop coo 7 – IbS IbC 7 –  IioS IioC 7 7 7 9 9 10 10 7 7 – – – 4 – – – 6 5  TCIio  Ioo  TCIoo CMV ACM Vout Vout ICC IEE PD – – – – – – – – – – – – 0.7 0.7 2.0 14 90 5.0 –85 8.0 8.0 2.0 3.0 33 7.0 7.0 – 80 – – – – – 4.0 5.0 – nA/°C µA nA/°C Vpp dB Vpp Vpp mAdc mW – – 12 12 30 30 µA – – 40 5.0 – – kΩ pF µA – – 200 2.0 – – kΩ pF AVS 2.5 300 80 3.5 – – – V/V 65 50 – – Fig. 5 Note 1 Symbol VCFT –– – – 40 140 0.04 20 – – mVrms 0.4 200 dB Min Typ Max Unit µVrms

k MHz

+ I1 ) I4 ; 2

I

bC

+ I8 ) I10 2

Input Offset Current IioS = I1–I4; IioC = I8–I10 Average Temperature Coefficient of Input Offset Current (TA = –55°C to +125°C) Output Offset Current (I6–I9) Average Temperature Coefficient of Output Offset Current (TA = –55°C to +125°C) Common–Mode Input Swing, Signal Port, fS = 1.0 kHz...
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