Electricidad

electricidad

BD136/138/140
Medium Power Linear and Switching Applications
• Complement to BD135, BD137 and BD139 respectively

1

TO-126 2.Collector 3.Base

1. Emitter

PNP EpitaxialSilicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BD136 : BD138 : BD140 : BD136 : BD138 : BD140 Value - 45 - 60 - 80 - 45 - 60 -80 -5 - 1.5 - 3.0 - 0.5 12.5 1.25 150 - 55 ~ 150 Units V V V V V V V A A A W W °C °C

VCEO

Collector-Emitter Voltage

VEBO IC ICP IB PC PC TJ TSTG

Emitter-Base Voltage Collector Current (DC)Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature

Electrical Characteristics TC=25°C unless otherwisenoted
Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD136 : BD138 : BD140 Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Test Condition IC = - 30mA, IB = 0Min. - 45 - 60 - 80 - 0.1 - 10 25 25 40 Typ. Max. Units V V V µA µA

ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(on)

VCB = - 30V, IE = 0 VEB = - 5V, IC = 0 VCE = - 2V, IC = - 5mA VCE = - 2V, IC = -0.5A VCE = - 2V, IC = - 150mA IC = - 500mA, IB = - 50mA VCE = - 2V, IC = - 0.5A

250 - 0.5 -1 V V

* Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage

* Pulse Test: PW=350µs, dutyCycle=2% Pulsed

hFE Classificntion
Classification hFE3 6 40 ~ 100 10 63 ~ 160 16 100 ~ 250

©2000 Fairchild Semiconductor International

Rev. A, February 2000

BD136/138/140

TypicalCharacteristics

100 90 80

-500

VCE(sat)[mV], SATURATION VOLTAGE

VCE = -2V

-450 -400 -350 -300 -250 -200 -150 -100 -50 -0 -1E-3

hFE, DC CURRENT GAIN

70 60 50 40 30 20 10 0 -10

IC = 20IB
-0.01 -0.1 -1

IC = 10

IB

-100

-1000

-10

IC[mA], COLLECTOR CURRENT

IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain

Figure 2. Collector-Emitter Saturation Voltage...