Electronica

DATA SHEET

SILICON POWER TRANSISTOR

2SA1843
PNP SILICON EPITAXIAL POWER TRANSISTOR
FOR HIGH-SPEED SWITCHING

The 2SA1843 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat).
This transistor is ideal for use as a driver in DC/DC converters and actuators.
In addition, this transistor features a package that can be auto-mounted in radialtaping specifications, thus
contributing to mounting cost reduction.

FEATURES
• Auto-mounting possible in radial taping specifications
• Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions
• High hFE and low VCE(sat):
VCE(sat) ≤ −0.3 V
@IC = −3.0 A, IB = −0.15 A
hFE ≥ 100

@VCE = −2.0 V, IC = −1.0 A

• Fast switching speed

ABSOLUTE MAXIMUM RATINGS(Ta = 25°C)
Parameter

Symbol

Conditions

Ratings

Unit

Collector to base voltage

VCBO

−100

V

Collector to emitter voltage

VCEO

−60

V

Emitter to base voltage

VEBO

−7.0

V

Collector current (DC)

IC(DC)

−5.0

A

Collector current (pulse)

IC(pulse)

−10

A

Base current (DC)

IB(DC)

−2.5

A

1.8

W

PW ≤ 300 µs, dutycycle ≤ 2%

Ta = 25°C

Total power dissipation

PT

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative foravailability and additional information.
Document No. D15591EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan

©

1998
2002

2SA1843
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector cutoff current

ICBO

VCB = −60 V, IE = 0

−10

µA

Collector cutoff current

ICER

VCE = −60 V,REB = 50 Ω
Ta = 125°C

−1.0

mA

Collector cutoff current

ICEX1

VCE = −60 V, VBE(off) = 1.5 V

−10

µA

Collector cutoff current

ICEX2

VCE = −60 V, VBE(off) = 1.5 V
Ta = 125°C

−1.0

mA

Emitter cutoff current

IEBO

VEB = −5.0 V, IC = 0

−10

µA

DC current gain

hFE1*

VCE = −2.0 V, IC = −0.5 A

100

DC current gain

hFE2*

VCE = −2.0 V, IC =−1.0 A

100

DC current gain

hFE3*

VCE = −2.0 V, IC = −3.0 A

60

Collector saturation voltage

VCE(sat)1*

IC = −3.0 A, IB = −0.15 A

−0.3

V

Collector saturation voltage

VCE(sat)2*

IC = −4.0 A, IB = −0.2 A

−0.5

V

Base saturation voltage

VBE(sat)1*

IC = −3.0 A, IB = −0.15 A

−1.2

V

Base saturation voltage

VBE(sat)2*

IC = −4.0 A, IB = −0.2A

−1.5

V

Gain bandwidth product

fT

VCE = −10 V, IC = −0.5 A

80

MHz

−
400

−
−

Collector capacitance

Cob

VCB = −10 V, IE = 0, f = 1 MHz

130

pF

Turn-on time

ton

0.15

µs

Storage time

tstg

IC = −3.0 A
IB1 = −IB2 = −0.15 A
RL = 17 Ω, VCC = −50 V

1.0

µs

0.1

µs

Fall time

tf

* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%hFE CLASSIFICATION
Marking

M

L

K

hFE

100 to 200

150 to 300

200 to 400

PACKAGE DRAWING (UNIT: mm)

TAPING SPECIFICATION

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