Eletronica

D880 NPN Epitaxial Silicon Transistor
TO-220

LOW FREQUENCY POWER AMPLIFIER
Complement to B834 Collector-Emitter Voltage: VCEO=150V CollectorDissipation: PC(max)=30W

Absolute Maximum Ratings (TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-BaseVoltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ TSTG Rating 60 60 7 3 30 150-55~+150 Unit V V V A W
o o

C C 1. Base 2. Collector 3. Emitter

Electrical Characteristics (TA=25oC)
Characteristic Collector-Emitter BreakdownVoltage Emitter Cut-off Current Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage CurrentGain Bandwidth Product Output Capacitance Turn On Time Storage Time Fall Time Symbol BVCEO IEBO ICBO hFE(1) hFE(2) VCE(SAT) VBE(ON) fT COB tON tSTG tFTest Conditions IC=50mA, IB=0 VEB=7V, IC=0 VCB=60V, IE=0 VCE=5V, IC=0.5A VCE=5V, IC=3A IC=3A, IB=0.3A VCE=5V, IC=0.5A VCE=5V, IC=0.5A VCB=10V,IE=0, f=1MHz VCC=30V, IC=1A IB1=-IB2=0.2A RL=30£[ 60 20 0.4 0.7 3 70 0.8 1.5 0.8 1 1 V V MHz pF £g s £g s £g s Min 60 100 100 300 Typ Max Unit V £g A£g A

hFE CLASSIFICATION
Classification
hFE1 O 60 – 120 Y 100 - 200 G 150 -300

Elite Enterprises (H.K.) Co., Ltd.
Flat 2505, 25/F., NanyangPlaza, 57 Hung To Road, Kwun Tong, H.K. Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: info@elite-ent.com.hk

Part No.: D880 Page: 1 / 1