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TIP41 Series(TIP41/41A/41B/41C)

TIP41 Series(TIP41/41A/41B/41C)
Medium Power Linear Switching Applications
• Complement to TIP42/42A/42B/42C

1

TO-220 2.Collector 3.Emitter

1.Base

NPNEpitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Parameter Collector-Emitter Voltage: TIP41 : TIP41A : TIP41B : TIP41C Collector-Emitter Voltage:TIP41 : TIP41A : TIP41B : TIP41C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction TemperatureStorage Temperature Value 40 60 80 100 40 60 80 100 5 6 10 2 65 2 150 - 65 ~ 150 Units V V V V V V V V V A A A W W °C °C

VCEO

VEBO IC ICP IB PC PC TJ TSTG

Electrical Characteristics TC=25°Cunless otherwise noted
Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : TIP41 : TIP41A : TIP41B : TIP41C Collector Cut-off Current : TIP41/41A : TIP41B/41C Collector Cut-off Current :TIP41 : TIP41A : TIP41B : TIP41C Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Test Condition IC =30mA, IB = 0 Min. 40 60 80 100 0.7 0.7 400 400 400 400 1 30 15
75

Max.

Units V V V V mA mA µA µA µA µA mA

ICEO

VCE = 30V, IB = 0 VCE = 60V, IB = 0 VCE = 40V, VEB = 0 VCE = 60V, VEB = 0VCE = 80V, VEB = 0 VCE = 100V, VEB = 0 VEB = 5V, IC = 0 VCE = 4V,IC = 0.3A VCE = 4V, IC = 3A IC = 6A, IB = 600mA VCE = 4V, IC = 6A VCE = 10V, IC = 500mA 3.0

ICES

IEBO hFE VCE(sat) VBE(sat) fT1.5
2.0

V V MHz

* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2000 Fairchild Semiconductor International Rev. A, February 2000

TIP41 Series(TIP41/41A/41B/41C)

Typical Characteristics
VBE(sat),VCE(sat)[mV], SATURATION VOLTAGE

1000

10000

VCE = 4V

IC /IB = 10

hFE, DC CURRENT GAIN

100

1000

V BE(sat)

10

100

V CE(sat)

1 1 10 100 1000 10000

10 1 10 100...